Smirnov Andrey S, Gribchenkova Nadezhda A, Alikhanyan Andrey S
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 119991, 31 Leninsky Pr., Moscow, Russia.
Rapid Commun Mass Spectrom. 2021 Aug 15;35(15):e9127. doi: 10.1002/rcm.9127.
In O is one of the most important semiconductor oxides in modern electronics. Vacuum deposition methods are often used for the preparation of In O -based nanomaterials. Thus, vaporization thermodynamics is of key importance for process control and optimization. Since the literature data on the vapor composition and partial pressure values for In O are contradictory, vaporization thermodynamics of In O needs to be clarified.
Vaporization behavior of In O was studied using the Knudsen effusion technique in the temperature range 1400-1610 K. Quartz effusion cells were employed. A magnet mass spectrometer with an ordinary focus and a sector-type analyzer was used. Heating of samples and molecular beam ionization were performed by electron impact. The operating ionizing electron energy was 75 eV.
A specially designed experiment allowed us to determine the individual mass spectrum of the In O molecule and, thus, to interpret the mass spectrum of the vapor registered during In O vaporization. The composition of the equilibrium vapor was quantified and the partial pressures of the vapor species were determined. On the basis of the experimental data, the standard enthalpies of some gaseous and heterogeneous reactions taking place during In O vaporization and the standard enthalpy of formation of In O(g) were calculated.
The presence of In species in the vapor over In O was confirmed and the vapor composition was quantified. Thermodynamic characteristics of In O vaporization were obtained and a value of the standard enthalpy of formation of In O(g) was recommended. These data can be used for further thermodynamic calculations and for evaluating parameters for the synthesis and exploitation of In O -containing materials.
氧化铟（In₂O₃）是现代电子学中最重要的半导体氧化物之一。真空沉积方法常用于制备基于氧化铟的纳米材料。因此，蒸发热力学对于工艺控制和优化至关重要。由于关于氧化铟的蒸汽组成和分压值的文献数据相互矛盾，氧化铟的蒸发热力学需要阐明。
使用努森 effusion 技术在1400 - 1610 K的温度范围内研究氧化铟的蒸发行为。采用石英 effusion 池。使用具有普通聚焦和扇形分析仪的磁质谱仪。通过电子轰击进行样品加热和分子束电离。操作电离电子能量为75 eV。
一个专门设计的实验使我们能够确定氧化铟分子的个体质谱，从而解释氧化铟蒸发过程中记录的蒸汽质谱。平衡蒸汽的组成被量化，蒸汽物种的分压被确定。基于实验数据，计算了氧化铟蒸发过程中发生的一些气态和多相反应的标准焓以及氧化铟（g）的标准生成焓。
证实了氧化铟上方蒸汽中铟物种的存在，并对蒸汽组成进行了量化。获得了氧化铟蒸发的热力学特性，并推荐了氧化铟（g）的标准生成焓值。这些数据可用于进一步的热力学计算以及评估含氧化铟材料的合成和开发参数。
