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多晶(SmGd)SrMnO(= 0.5和0.7)化合物的自旋极化隧穿和极化子输运性质

Spin-polarized tunneling and polaronic transport properties of polycrystalline (SmGd)SrMnO(= 0.5 and 0.7) compounds.

作者信息

Mazumdar Dipak, Das Kalipada, Das I

机构信息

CMP Division, Saha Institute of Nuclear Physics, HBNI, 1/AF, Bidhannagar, Kolkata 700064, India.

Department of Physics, Seth Anandram Jaipuria College, 10, Raja Naba Krishna Street, Kolkata 700005, India.

出版信息

J Phys Condens Matter. 2021 Jun 10;33(30). doi: 10.1088/1361-648X/ac0386.

Abstract

The detail investigations on the magneto-transport properties of the polycrystalline (SmGd)SrMnO(SGSMO-1) and (SmGd)SrMnO(SGSMO-2) compounds, having a glassy-like and ferromagnetic ground states respectively have been carried out in details. Due to the existence of two different magnetic ground states in the above mentioned systems, the magneto-transport properties are markedly differed from each other, specially at the low temperature region. The highly semi-conducting nature of the SGSMO-1 compound is suppressed with the application of magnetic field, whereas the SGSMO-2 compound exhibits a metal-insulator transition in its pristine state. The high-temperature semiconducting state of both the systems can be well-explained with the polaronic transport mechanisms via small-polaron hopping and variable-range-hopping models. The low-temperature metallic states for both the systems are explored by considering the various contributions arise from the grain boundary effect, electron-electron, electron-phonon, electron-magnon etc scattering processes. The spin-polarized tunneling transport mechanism at the grain boundaries plays a crucial role in the enhancement of low-field magnetoresistance in the studied systems.

摘要

分别对具有类玻璃态和铁磁基态的多晶(SmGd)SrMnO(SGSMO - 1)和(SmGd)SrMnO(SGSMO - 2)化合物的磁输运性质进行了详细研究。由于上述体系中存在两种不同的磁基态,磁输运性质彼此明显不同,特别是在低温区域。施加磁场会抑制SGSMO - 1化合物的高半导体性质,而SGSMO - 2化合物在其原始状态下表现出金属 - 绝缘体转变。两个体系的高温半导体态可以通过小极化子跳跃和变程跳跃模型的极化子输运机制得到很好的解释。通过考虑晶界效应、电子 - 电子、电子 - 声子、电子 - 磁振子等散射过程产生的各种贡献,探索了两个体系的低温金属态。晶界处的自旋极化隧穿输运机制在所研究体系的低场磁电阻增强中起着关键作用。

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