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通过响应面法优化镍硒化物在析氢和析氧反应中的性能。

Optimization of nickel selenide for hydrogen and oxygen evolution reactions by response surface methodology.

机构信息

Department of Materials Engineering, Faculty of Engineering, Tarbiat Modares University, P.O. Box: 14115-143, Tehran, Iran.

Department of Materials Engineering, Faculty of Engineering, Tarbiat Modares University, P.O. Box: 14115-143, Tehran, Iran.

出版信息

J Colloid Interface Sci. 2021 Oct 15;600:324-337. doi: 10.1016/j.jcis.2021.05.003. Epub 2021 May 5.

Abstract

In this study, the electrocatalytic activity of Ni-Se electrode synthesized on nickel foam by pulse electrodeposition was optimized through the design of experiments (DOE) approach using the response surface methodology (RSM) for both hydrogen and oxygen evolution reactions. The frequency (f), duty cycle (dc), current density (i), and electrodeposition time (sum of ts) were chosen as the parameters of the pulse electrodeposition method. The analyses of variance (ANOVA) were performed on the responses of the designed experiments that included the required overpotential at the current density of 10 mA/cm for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) (η and η), active surface area (R) and intrinsic electrocatalytic activity (i/R). The results indicated that η, η, and R are mainly influenced by duty cycle and electrodeposition time, while i/R is affected by frequency and time. The optimized NiSe electrode synthesized under optimal conditions of pulse electrodeposition (low duty cycle and prolonged electrodeposition time) showed the most desirable values for η, η, and R, equal to 44 mV (vs. RHE), 235 mV (vs. RHE) and 14700, respectively. The nanostructured NiSe demonstrated the highest potential in the bifunctional application of OER and HER.

摘要

在这项研究中,通过使用响应面法(RSM)设计实验(DOE),优化了通过脉冲电镀在泡沫镍上合成的 Ni-Se 电极在析氢和析氧反应中的电催化活性。频率(f)、占空比(dc)、电流密度(i)和电沉积时间(ts 之和)被选为脉冲电沉积方法的参数。对包括在 10 mA/cm 电流密度下析氢反应(HER)和析氧反应(OER)所需过电位(η 和 η)、活性表面积(R)和本征电催化活性(i/R)的设计实验的响应进行了方差分析(ANOVA)。结果表明,η、η和 R 主要受占空比和电沉积时间的影响,而 i/R 受频率和时间的影响。在脉冲电沉积的最佳条件(低占空比和延长电沉积时间)下合成的优化 NiSe 电极表现出最理想的 η、η 和 R 值,分别为 44 mV(相对于 RHE)、235 mV(相对于 RHE)和 14700。纳米结构的 NiSe 在 OER 和 HER 的双功能应用中表现出最高的潜力。

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