Kang Ping, Zheng Kai-Ge, Wang Zhuo, Chen Li, Guo Zheng
Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China.
Key Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Hefei 230601, People's Republic of China.
Nanotechnology. 2021 May 28;32(33). doi: 10.1088/1361-6528/ac0192.
To develop excellent photoelectronic and photovoltaic devices, a semiconductor with high photoelectron production efficiency and broad band absorption is urgently required. In this article, novel II-type PbSe/ZnSe hetero-nanobelts with enhanced near-infrared absorption have been synthesized via a facile strategy of a partial cation-exchange reaction and thermal treatment. Derived from ZnSe·0.5NHnanobelts as templates, the belt-like morphology was preserved. Due to the mismatch of the crystal type and parameters between PbSe and ZnSe, the formed PbSe in the form of nanoparticles were separated out and decorated on the nanobelts. Furthermore, the composition ratio of Pb/Zn can be tuned through manipulating the adding amount of Pbcations, the reaction temperature and time. The ultraviolet-visible-infrared diffuse spectra measurements suggest that the as-prepared PbSe/ZnSe hetero-nanobelts exhibited a broad band absorption from 300 to 1000 nm. In addition, they demonstrated excellent photoresponsivity in the same wavelength region and displayed a peak at approximately 840 nm. Finally, the enhanced photoelectronic sensing mechanism was discussed.
为了开发优异的光电器件和光伏器件，迫切需要一种具有高光电子产生效率和宽带吸收的半导体。在本文中，通过部分阳离子交换反应和热处理的简便策略合成了具有增强近红外吸收的新型II型PbSe/ZnSe异质纳米带。以ZnSe·0.5NH纳米带为模板，保留了带状形态。由于PbSe和ZnSe之间晶体类型和参数的不匹配，以纳米颗粒形式形成的PbSe被分离出来并装饰在纳米带上。此外，可以通过控制Pb阳离子的添加量、反应温度和时间来调节Pb/Zn的组成比。紫外-可见-红外漫反射光谱测量表明，所制备的PbSe/ZnSe异质纳米带在300至1000nm范围内表现出宽带吸收。此外，它们在相同波长区域表现出优异的光响应性，并在约840nm处出现峰值。最后，讨论了增强的光电子传感机制。
