使用飞行时间二次离子质谱法研究界面逆狄尔斯-阿尔德反应的动力学。

Using TOF-SIMS Spectrometry to Study the Kinetics of the Interfacial Retro Diels-Alder Reaction.

作者信息

Hassouna Lilia, Enganati Sachin Kumar, Bally-Le Gall Florence, Mertz Grégory, Bour Jérôme, Ruch David, Roucoules Vincent

机构信息

Materials and Research Technology Department, Luxembourg Institute of Science and Technology, 5 Avenue des Hauts-Fourneaux, L-4362 Esch-sur-Alzette, Luxembourg.

Department of Physics and Materials Science, University of Luxembourg, 2 Avenue de l'Université, L-4365 Esch-sur-Alzette, Luxembourg.

出版信息

Materials (Basel). 2021 May 20;14(10):2674. doi: 10.3390/ma14102674.

DOI:10.3390/ma14102674

PMID:34065263

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8161361/

Abstract

In this work, the use of Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS) was explored as a technique for monitoring the interfacial retro Diels-Alder (retro DA) reaction occurring on well-controlled self-assembled monolayers (SAMs). A molecule containing a Diels-Alder (DA) adduct was grafted on to the monolayers, then the surface was heated at different temperatures to follow the reaction conversion. A TOF-SIMS analysis of the surface allowed the detection of a fragment from the molecule, which is released from the surface when retro DA reaction occurs. Hence, by monitoring the decay of this fragment's peak integral, the reaction conversion could be determined in function of the time and for different temperatures. The viability of this method was then discussed in comparison with the results obtained by H NMR spectroscopy.

摘要

在本研究中，探讨了使用飞行时间二次离子质谱（TOF-SIMS）作为一种监测在可控自组装单分子层（SAMs）上发生的界面逆狄尔斯-阿尔德（retro DA）反应的技术。将含有狄尔斯-阿尔德（DA）加合物的分子接枝到单分子层上，然后在不同温度下加热表面以跟踪反应转化率。对表面进行TOF-SIMS分析可以检测到分子中的一个片段，当逆DA反应发生时，该片段会从表面释放出来。因此，通过监测该片段峰积分的衰减，可以确定反应转化率随时间和不同温度的变化情况。然后将该方法的可行性与通过核磁共振氢谱（H NMR）光谱法获得的结果进行了比较。