Nagai Hiroki, Ogawa Naoki, Sato Mitsunobu
Department of Applied Physics, School of Advanced Engineering, Kogakuin University, Tokyo 192-0015, Japan.
Electrical Engineering and Electronics Program, Graduate School, Kogakuin University, Tokyo 192-0015, Japan.
Nanomaterials (Basel). 2021 May 20;11(5):1348. doi: 10.3390/nano11051348.
Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm at 254 nm) for more than 6 h at 20-40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).
由分散的多壁碳纳米管（MWCNT）和SiO基体复合材料组成的深紫外（DUV）光透明导电复合薄膜，被制备在石英玻璃基板上。通过在20 - 40°C下用弱紫外（UV）光（254 nm波长下4 mW/cm²）照射前驱体薄膜超过6小时，获得了厚度为220 nm的透明且附着力良好的非晶薄膜，该前驱体薄膜是通过旋涂MWCNT在水中和Si(IV)配合物在乙醇中的混合溶液得到的。MWCNT/SiO复合薄膜的电阻率为0.7Ω·cm，在从深紫外到可见光的波长区域内透过率高于80%。MWCNT/SiO复合薄膜在铅笔硬度为8H时表现出耐刮性。重要的是，即使在500°C下热处理1小时后，MWCNT/SiO复合薄膜的电阻率仍保持在原始水平。观察到复合薄膜的热处理提高了对包含强酸（HCl）和强碱（NaOH）的水溶液的耐久性。
