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本征低钠/钠超离子导体界面电阻为室温钠金属电池铺平了道路。

Intrinsic low sodium/NASICON interfacial resistance paving the way for room temperature sodium-metal battery.

作者信息

Oh Jin An Sam, Wang Yumei, Zeng Qibin, Sun Jianguo, Sun Qiaomei, Goh Minhao, Chua Bengwah, Zeng Kaiyang, Lu Li

机构信息

Department of Mechanical Engineering, National University of Singapore, Singapore 117575, Singapore; Integrative Sciences and Engineering Programme, NUS Graduate School, National University of Singapore, Singapore 138632, Singapore; Singapore Institute of Manufacturing Technology, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis 138634 Singapore.

Department of Mechanical Engineering, National University of Singapore, Singapore 117575, Singapore.

出版信息

J Colloid Interface Sci. 2021 Nov;601:418-426. doi: 10.1016/j.jcis.2021.05.123. Epub 2021 May 25.

Abstract

Sodium-metal batteries have strong potential to be utilized as stationary high energy density storage devices. Owing to its high ionic conductivity, low electronic conductivity and relatively easy fabrication, NASICON-structure electrolyte (NaZrSiPO) is one of the potential candidates to be considered in the solid-state sodium-metal batteries at room temperature. However, the large interfacial resistance between the solid-state electrolyte and the metallic sodium is known to limit the critical current density (CCD) of the cell. In this study, a simple and cost-effective annealing process is introduced to the electrolyte preparation to improves its interface with metallic sodium. X-ray photoelectron spectroscopy and scanning probe microscopy show that Si forms bonds with the surface functional groups when exposed to the ambient condition. With the removal of surface contamination as well as a partially reduced electrolyte surface, the annealed electrolyte shows an extremely small interfacial resistance of 11 Ω cm and a high CCD of 0.9 mA cm. This study provides an insight on the electrolyte surface preparation and its significant in a sodium-metal solid-state battery.

摘要

钠金属电池作为固定式高能量密度存储设备具有巨大潜力。由于其高离子电导率、低电子电导率以及相对易于制造,NASICON结构电解质(NaZrSiPO)是室温下固态钠金属电池中值得考虑的潜在候选材料之一。然而,固态电解质与金属钠之间的大界面电阻已知会限制电池的临界电流密度(CCD)。在本研究中,一种简单且经济高效的退火工艺被引入到电解质制备过程中,以改善其与金属钠的界面。X射线光电子能谱和扫描探针显微镜表明,硅在暴露于环境条件时会与表面官能团形成键。随着表面污染物的去除以及电解质表面的部分还原,退火后的电解质显示出极小的界面电阻11Ω·cm和0.9mA/cm的高临界电流密度。本研究为钠金属固态电池中的电解质表面制备及其重要性提供了见解。

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