用于白光发光二极管和场发射显示器的具有钪硅多环结构的青色宽带发射磷光体。
Cyan Broad-Band Emission Phosphor with Scandium Silicon Multiple-Ring Structure for White Light-Emitting Diodes and Field Emission Displays.
作者信息
Zhou Yuhan, Chen Hang, Wang Yuhua
机构信息
Department of Materials Science, School of Physical Science and Technology, Key Laboratory of Special Function Materials and Structure Design of Ministry of Education, National and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology of National Development and Reform Commission, Lanzhou University, Lanzhou 730000, P. R. China.
出版信息
Inorg Chem. 2021 Jun 21;60(12):8870-8879. doi: 10.1021/acs.inorgchem.1c00773. Epub 2021 Jun 7.
Silicate phosphor KBaScSiO:Ce (KBSS:Ce), as a novel material, has been prepared by the solid-state method in this study. The crystal structure, luminescent properties, thermal stability, and cathodoluminescence (CL) properties of this material were analyzed systematically. It concludes that the phosphor can emit cyan light with emission peak at 509 nm under n-UV light excitation (300-400 nm). By coating KBSS:Ce with a red-emitting CaAlSiN:Eu on a n-UV (365 nm) light-emitting diode (LED) chip, the intense warm white light with high (83.4) and low CCT (3652) can be produced under a 350 mA forward bias current.In addition, the CL performance shows that KBSS:0.10Ce has high saturation current and voltage and good color stability under low voltage conditions. All these results indicate that KBSS:Ce phosphor will be very promising in LED and field emission display applications.
在本研究中，通过固相法制备了新型材料硅酸盐荧光粉KBaScSiO:Ce（KBSS:Ce）。系统分析了该材料的晶体结构、发光性能、热稳定性和阴极发光（CL）性能。结果表明，该荧光粉在近紫外光激发（300 - 400 nm）下可发射出峰值波长为509 nm的青色光。通过在近紫外（365 nm）发光二极管（LED）芯片上用发红光的CaAlSiN:Eu包覆KBSS:Ce，在350 mA正向偏置电流下可产生高显色指数（83.4）和低色温（3652）的强烈暖白光。此外，CL性能表明，KBSS:0.10Ce在低电压条件下具有高饱和电流和电压以及良好的颜色稳定性。所有这些结果表明，KBSS:Ce荧光粉在LED和场发射显示应用中具有很大的潜力。
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