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通过电子顺磁共振光谱法探测掺杂有机半导体中的自旋-自旋相互作用和自旋离域化。

Spin-spin interactions and spin delocalisation in a doped organic semiconductor probed by EPR spectroscopy.

作者信息

Tait Claudia E, Reckwitz Anna, Arvind Malavika, Neher Dieter, Bittl Robert, Behrends Jan

机构信息

Department of Physics, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany.

Institute of Physics and Astronomy, Universität Potsdam, Karl-Liebknecht-Str. 24-25, 14476 Potsdam, Germany.

出版信息

Phys Chem Chem Phys. 2021 Jun 30;23(25):13827-13841. doi: 10.1039/d1cp02133h.

Abstract

The enhancement and control of the electrical conductivity of organic semiconductors is fundamental for their use in optoelectronic applications and can be achieved by molecular doping, which introduces additional charge carriers through electron transfer between a dopant molecule and the organic semiconductor. Here, we use Electron Paramagnetic Resonance (EPR) spectroscopy to characterise the unpaired spins associated with the charges generated by molecular doping of the prototypical organic semiconductor poly(3-hexylthiophene) (P3HT) with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) and tris(pentafluorophenyl)borane (BCF). The EPR results reveal the P3HT radical cation as the only paramagnetic species in BCF-doped P3HT films and show evidence for increased mobility of the detected spins at high doping concentrations as well as formation of antiferromagnetically coupled spin pairs leading to decreased spin concentrations at low temperatures. The EPR signature for F4TCNQ-doped P3HT is found to be determined by spin exchange between P3HT radical cations and F4TCNQ radical anions. Results from continuous-wave and pulse EPR measurements suggest the presence of the unpaired spin on P3HT in a multitude of environments, ranging from free P3HT radical cations with similar properties to those observed in BCF-doped P3HT, to pairs of dipolar and exchange-coupled spins on P3HT and the dopant anion. Characterisation of the proton hyperfine interactions by ENDOR allowed quantification of the extent of spin delocalisation and revealed reduced delocalisation in the F4TCNQ-doped P3HT films.

摘要

提高和控制有机半导体的电导率是其在光电子应用中使用的基础,可通过分子掺杂来实现,分子掺杂通过掺杂剂分子与有机半导体之间的电子转移引入额外的电荷载流子。在此,我们使用电子顺磁共振(EPR)光谱来表征与用2,3,5,6-四氟-7,7,8,8-四氰基对苯二醌二甲烷(F4TCNQ)和三(五氟苯基)硼烷(BCF)对典型有机半导体聚(3-己基噻吩)(P3HT)进行分子掺杂所产生的电荷相关的未成对自旋。EPR结果表明,P3HT自由基阳离子是BCF掺杂的P3HT薄膜中唯一的顺磁物种,并显示出在高掺杂浓度下检测到的自旋迁移率增加的证据,以及在低温下形成反铁磁耦合自旋对导致自旋浓度降低的证据。发现F4TCNQ掺杂的P3HT的EPR特征由P3HT自由基阳离子与F4TCNQ自由基阴离子之间的自旋交换决定。连续波和脉冲EPR测量结果表明,在多种环境中P3HT上存在未成对自旋,范围从具有与BCF掺杂的P3HT中观察到的类似性质的游离P3HT自由基阳离子,到P3HT和掺杂剂阴离子上的偶极和交换耦合自旋对。通过电子核双共振(ENDOR)对质子超精细相互作用的表征允许对自旋离域程度进行量化,并揭示了F4TCNQ掺杂的P3HT薄膜中离域程度降低。

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