Mansour Ahmed E, Warren Ross, Lungwitz Dominique, Forster Michael, Scherf Ullrich, Opitz Andreas, Malischewski Moritz, Koch Norbert
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany.
Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
ACS Appl Mater Interfaces. 2023 Oct 4;15(39):46148-46156. doi: 10.1021/acsami.3c10373. Epub 2023 Sep 20.
Strong molecular dopants for organic semiconductors that are stable against diffusion are in demand, enhancing the performance of organic optoelectronic devices. The conventionally used p-dopants based on 7,7,8,8-tetracyanoquinodimethane (TCNQ) and its derivatives "FTCN(N)Q", such as 2,3,4,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) and 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (F6TCNNQ), feature limited oxidation strength, especially for modern polymer semiconductors with high ionization energy (IE). These small molecular dopants also exhibit pronounced diffusion in the polymer hosts. Here, we demonstrate a facile approach to increase the oxidation strength of FTCN(N)Q by coordination with four tris(pentafluorophenyl)borane (BCF) molecules using a single-step solution mixing process, resulting in bulky dopant complexes "FTCN(N)Q-4(BCF)". Using a series of polymer semiconductors with IE up to 5.9 eV, we show by optical absorption spectroscopy of solutions and thin films that the efficiency of doping using FTCN(N)Q-4(BCF) is significantly higher compared to that using FTCN(N)Q or BCF alone. Electrical transport measurements with the prototypical poly(3-hexylthiophene-2,5-diyl) (P3HT) confirm the higher doping efficiency of F4TCNQ-4(BCF) compared to F4TCNQ. Additionally, the bulkier structure of F4TCNQ-4(BCF) is shown to result in higher stability against drift in P3HT under an applied electric field as compared to F4TCNQ. The simple approach of solution-mixing of readily accessible molecules thus offers access to enhanced molecular p-dopants for the community.
对有机半导体而言,需要有能抗扩散的强分子掺杂剂,以提升有机光电器件的性能。基于7,7,8,8 - 四氰基喹二甲烷(TCNQ)及其衍生物“FTCN(N)Q”的传统p型掺杂剂,如2,3,4,6 - 四氟 - 7,7,8,8 - 四氰基喹二甲烷(F4TCNQ)和1,3,4,5,7,8 - 六氟四氰基萘并喹二甲烷(F6TCNNQ),其氧化强度有限,尤其对于具有高电离能(IE)的现代聚合物半导体而言。这些小分子掺杂剂在聚合物主体中还表现出明显的扩散现象。在此,我们展示了一种简便方法,通过使用单步溶液混合过程与四个三(五氟苯基)硼烷(BCF)分子配位来提高FTCN(N)Q的氧化强度,从而得到体积较大的掺杂剂配合物“FTCN(N)Q - 4(BCF)”。使用一系列电离能高达5.9 eV的聚合物半导体,我们通过溶液和薄膜的光吸收光谱表明,与单独使用FTCN(N)Q或BCF相比,使用FTCN(N)Q - 4(BCF)的掺杂效率显著更高。用典型的聚(3 - 己基噻吩 - 2,5 - 二亚基)(P3HT)进行的电输运测量证实,与F4TCNQ相比,F4TCNQ - 4(BCF)具有更高的掺杂效率。此外,与F4TCNQ相比,F4TCNQ - 4(BCF)更庞大的结构在施加电场下在P3HT中表现出更高的抗漂移稳定性。因此,这种将易于获得的分子进行溶液混合的简单方法为该领域提供了获得增强型分子p型掺杂剂的途径。