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大面积II型狄拉克半金属PtTe₂中负太赫兹光电导率的观测

Observation of Negative Terahertz Photoconductivity in Large Area Type-II Dirac Semimetal PtTe_{2}.

作者信息

Suo Peng, Zhang Huiyun, Yan Shengnan, Zhang Wenjie, Fu Jibo, Lin Xian, Hao Song, Jin Zuanming, Zhang Yuping, Zhang Chao, Miao Feng, Liang Shi-Jun, Ma Guohong

机构信息

Department of Physics, Shanghai University, Shanghai 200444, China.

College of Electronics and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China.

出版信息

Phys Rev Lett. 2021 Jun 4;126(22):227402. doi: 10.1103/PhysRevLett.126.227402.

Abstract

As a newly emergent type-II Dirac semimetal, platinum telluride (PtTe_{2}) stands out from other two dimensional noble-transition-metal dichalcogenides for the unique band structure and novel physical properties, and has been studied extensively. However, the ultrafast response of low energy quasiparticle excitation in terahertz frequency remains nearly unexplored yet. Herein, we employ optical pump-terahertz probe (OPTP) spectroscopy to systematically study the photocarrier dynamics of PtTe_{2} thin films with varying pump fluence, temperature, and film thickness. Upon photoexcitation the terahertz photoconductivity (PC) of PtTe_{2} films shows abrupt increase initially, while the terahertz PC changes into negative value in a subpicosecond timescale, followed by a prolonged recovery process that lasted a few nanoseconds. The magnitude of both positive and negative terahertz PC response shows strongly pump fluence dependence. We assign the unusual negative terahertz PC to the formation of small polaron due to the strong electron-phonon (e-ph) coupling, which is further substantiated by temperature and film thickness dependent measurements. Moreover, our investigations give a subpicosecond timescale of simultaneous carrier cooling and polaron formation. The present study provides deep insights into the underlying dynamics evolution mechanisms of photocarrier in type-II Dirac semimetal upon photoexcitation, which is of crucial importance for designing PtTe_{2}-based optoelectronic devices.

摘要

作为一种新出现的II型狄拉克半金属,碲化铂(PtTe₂)因其独特的能带结构和新颖的物理性质,在其他二维贵金属过渡金属二硫族化合物中脱颖而出,并得到了广泛研究。然而,太赫兹频率下低能准粒子激发的超快响应仍几乎未被探索。在此,我们采用光泵浦-太赫兹探测(OPTP)光谱技术,系统地研究了不同泵浦通量、温度和薄膜厚度下PtTe₂薄膜的光载流子动力学。光激发后,PtTe₂薄膜的太赫兹光电导率(PC)最初显示出突然增加,而太赫兹PC在亚皮秒时间尺度内变为负值,随后是持续数纳秒的长时间恢复过程。正负太赫兹PC响应的幅度都表现出强烈的泵浦通量依赖性。我们将异常的负太赫兹PC归因于强电子-声子(e-ph)耦合导致的小极化子的形成,这通过温度和薄膜厚度依赖性测量得到了进一步证实。此外,我们的研究给出了载流子冷却和极化子形成同时发生的亚皮秒时间尺度。本研究深入洞察了II型狄拉克半金属中光激发时光载流子的潜在动力学演化机制,这对设计基于PtTe₂的光电器件至关重要。

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