Fu Jibo, Jiang Meng, Suo Peng, Zhang Wenjie, Lin Xian, Yan Xiaona, Zhang Saifeng, Ma Guohong
Appl Opt. 2021 Jun 10;60(17):5037-5043. doi: 10.1364/AO.425337.
In this study, we have reported a newly ultrafast optically modulated terahertz (THz) switch based on the transition metal dichalcogenide (TMD) material platinum diselenide (${{\rm PtSe}_2}$) with different thicknesses. The high-quality ${{\rm PtSe}_2}$ thin films with centimeter scale are fabricated on sapphire substrate by the chemical vapor deposition method. The optical pump and THz probe (OPTP) spectroscopy reveals that the THz response of the thin films is as fast as ${\sim} 2.0 ; {\rm ps}$ after photoexcitation of a 780 nm pulse. Interestingly, we found that the THz response time of the ${{\rm PtSe}_2}$ semimetal phase is faster than that of the semiconducting phase. In addition, the THz response time becomes faster when increasing the film thickness for the semimetal phase ${{\rm PtSe}_2}$, while for the semiconducting phase, the response time becomes slower with film thickness. Moreover, degenerate optical pump and optical probe spectroscopy (OPOP) demonstrated that the ultrafast photoinduced negative absorption (photoinduced bleaching) occurs after photoexcitation of 780 nm, and the subsequent recovery consists of two relaxation processes: the fast component with more than 85% of weight has a lifetime of ${\sim}{1.5};{\rm ps}$ for semiconducting-phase films and less than 1 ps for the semimetal phase, similar to the response time obtained from OPTP measurement. The slow component with less than 15% of weight has a lifetime of a few hundred picoseconds. The subpicosecond response time observed in both OPTP and OPOP is ascribed to the carrier trapping by defect states, and the slow relaxation process appearing in OPOP arises from the defect state relevant relaxation that is insensitive to the THz photoconductivity due to the frozen carrier mobility in defect states. Our experimental results demonstrate a new application of TMD materials such as ${{\rm PtSe}_2}$ in THz technology, for instance, the design and fabrication of THz modulators and THz switches.
在本研究中,我们报道了一种基于不同厚度的过渡金属二硫属化物(TMD)材料二硒化铂(${{\rm PtSe}_2}$)的新型超快光调制太赫兹(THz)开关。通过化学气相沉积法在蓝宝石衬底上制备了厘米级的高质量${{\rm PtSe}_2}$薄膜。光泵浦和太赫兹探测(OPTP)光谱表明,在780 nm脉冲光激发后,薄膜的太赫兹响应速度快至约2.0 ps。有趣的是,我们发现${{\rm PtSe}_2}$半金属相的太赫兹响应时间比半导体相的更快。此外,对于半金属相${{\rm PtSe}_2}$,增加薄膜厚度时太赫兹响应时间变快,而对于半导体相,响应时间随薄膜厚度增加而变慢。此外,简并光泵浦和光探测光谱(OPOP)表明,在780 nm光激发后会出现超快光致负吸收(光致漂白),随后的恢复过程包括两个弛豫过程:对于半导体相薄膜,权重超过85%的快速成分的寿命约为1.5 ps,对于半金属相则小于1 ps,这与从OPTP测量获得的响应时间相似。权重小于15%的慢速成分的寿命为几百皮秒。在OPTP和OPOP中观察到的亚皮秒响应时间归因于缺陷态对载流子的俘获,而OPOP中出现的缓慢弛豫过程源于与缺陷态相关的弛豫,由于缺陷态中载流子迁移率冻结,该弛豫对太赫兹光电导率不敏感。我们的实验结果证明了TMD材料如${{\rm PtSe}_2}$在太赫兹技术中的新应用,例如太赫兹调制器和太赫兹开关的设计与制造。