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B 位柱状有序卤化物双钙钛矿:理论设计与实验验证

B-Site Columnar-Ordered Halide Double Perovskites: Theoretical Design and Experimental Verification.

作者信息

Ji Guoqi, Han Chuanzhou, Hu Sanlue, Fu Pengfei, Chen Xu, Guo Jiangang, Tang Jiang, Xiao Zewen

机构信息

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

出版信息

J Am Chem Soc. 2021 Jul 14;143(27):10275-10281. doi: 10.1021/jacs.1c03825. Epub 2021 Jun 24.

Abstract

Halide double perovskites AB(I)B(III)X, in which monovalent B(I) and trivalent B(III) cations are arranged in the B-sites of the perovskite structure with a rock-salt ordering, have attracted substantial interest in the field of optoelectronics. However, the rock-salt ordering generally leads to low electronic dimensionality, with relatively large bandgaps and large carrier effective masses. In this work, we demonstrate, by density functional theory (DFT) calculations, that the electronic dimensionality and thus the electronic properties of halide double perovskites can be effectively modulated by manipulating the arrangement of the B-site cations. Through symmetry analysis and DFT calculations, we propose a family of halide double perovskites AB(I)B(II)X where the B-site cations adopt a columnar-ordered arrangement. Among the considered compounds, CsAgPdCl, CsAgPdBr, and CsAgPtCl were successfully synthesized as the first examples of the B-site columnar-ordered halide double perovskites. These compounds exhibit small bandgaps of 1.33-1.77 eV that are suitable for visible light absorption, small carrier effective masses along the octahedra chains, and good thermal and air stability. Our work provides a prototype double perovskite structure to incorporate cations in +1 and +2 oxidation states, which may significantly expand the large family of the halide double perovskites and offer a platform to explore prospective optoelectronic semiconductors.

摘要

卤化物双钙钛矿AB(I)B(III)X中,单价B(I)和三价B(III)阳离子以岩盐有序排列在钙钛矿结构的B位,在光电子领域引起了广泛关注。然而,岩盐有序排列通常导致低电子维度,具有相对较大的带隙和较大的载流子有效质量。在这项工作中,我们通过密度泛函理论(DFT)计算表明,卤化物双钙钛矿的电子维度以及电子性质可以通过操纵B位阳离子的排列来有效调节。通过对称性分析和DFT计算,我们提出了一类卤化物双钙钛矿AB(I)B(II)X,其中B位阳离子采用柱状有序排列。在所考虑的化合物中,CsAgPdCl、CsAgPdBr和CsAgPtCl作为B位柱状有序卤化物双钙钛矿的首个实例被成功合成。这些化合物表现出1.33 - 1.77 eV的小带隙,适合可见光吸收,沿八面体链的载流子有效质量小,并且具有良好的热稳定性和空气稳定性。我们的工作提供了一种原型双钙钛矿结构,用于掺入 +1和 +2氧化态的阳离子,这可能会显著扩展卤化物双钙钛矿的大家族,并提供一个探索潜在光电子半导体的平台。

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