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强介电屏蔽下单层WSe₂中激子性质的压电调制

Piezoelectric Modulation of Excitonic Properties in Monolayer WSe under Strong Dielectric Screening.

作者信息

Datta Kanak, Li Zidong, Lyu Zhengyang, Deotare Parag B

机构信息

Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States.

Applied Physics Program, University of Michigan Ann Arbor, Michigan 48109, United States.

出版信息

ACS Nano. 2021 Jul 27;15(7):12334-12341. doi: 10.1021/acsnano.1c04269. Epub 2021 Jun 28.

Abstract

We investigate the interaction of excitons in monolayer WSe with the piezoelectric field of surface acoustic wave (SAW) at room temperature using photoluminescence (PL) spectroscopy and report a large in-plane exciton polarizability of 8.43 ± 0.18 × 10 Dm/V. Such large polarizability arises due to the strong dielectric screening from the piezoelectric substrate. In addition, we show that the exciton-piezoelectric field interaction and population distribution between neutral excitons and trions can be optically manipulated by controlling the field screening using photogenerated free carriers. Finally, we model the broadening of the exciton PL line width and report that the interaction is dominated by type-II band edge modulation, because of the in-plane electric field in the system. The results help understand the interaction of excitons in monolayer transition-metal dichalcogenides that will aid in controlled manipulation of excitonic properties for applications in sensing, detection, and on-chip communication.

摘要

我们在室温下使用光致发光(PL)光谱研究了单层WSe中激子与表面声波(SAW)的压电场之间的相互作用,并报告了8.43±0.18×10 Dm/V的大面内激子极化率。如此大的极化率是由于压电衬底的强介电屏蔽所致。此外,我们表明,通过使用光生自由载流子控制场屏蔽,可以对激子-压电场相互作用以及中性激子和三重态激子之间的布居分布进行光学操纵。最后,我们对激子PL线宽的展宽进行了建模,并报告由于系统中的面内电场,这种相互作用主要由II型带边调制主导。这些结果有助于理解单层过渡金属二卤化物中激子的相互作用,这将有助于对激子特性进行可控操纵,以用于传感、检测和片上通信等应用。

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