Zhong Jiyou, Zhuo Ya, Du Fu, Zhang Hongshi, Zhao Weiren, Brgoch Jakoah
School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
Department of Chemistry, University of Houston, Houston, Texas 77204, United States.
ACS Appl Mater Interfaces. 2021 Jul 14;13(27):31835-31842. doi: 10.1021/acsami.1c05949. Epub 2021 Jun 29.
Broadband near-infrared (NIR) emitting materials are in great demand as next-generation smart NIR light sources. In this work, a Cr-substituted phosphor capable of efficiently converting visible to NIR light is developed through the solid solution, GaInO:Cr (0 ≤ ≤ 0.5). The compounds were prepared using high-temperature solid-state synthesis, and the crystal and electronic structure, morphology, site preference, and photoluminescence properties are studied. The photoluminescence results demonstrate a high quantum yield (88%) and impressive absorption efficiency (50%) when = 0.4. The NIR emission is tunable across a wide range (713-820 nm) depending on the value of . Moreover, fabricating a prototype of a phosphor-converted NIR light-emitting diode (LED) device using 450 nm LED and the [(GaCr)In]O phosphor showed an output power that reached 40.4 mW with a photoelectric conversion efficiency of 25% driven by a current of 60 mA, while the resulting device was able to identify damaged produce that was undetectable using visible light. These results demonstrate the outstanding potential of this phosphor for NIR LED imaging applications.
宽带近红外（NIR）发光材料作为下一代智能近红外光源有很大的需求。在这项工作中，通过固溶体GaInO:Cr（0≤≤0.5）开发了一种能够有效地将可见光转换为近红外光的Cr取代荧光粉。使用高温固态合成法制备了这些化合物，并研究了其晶体和电子结构、形态、位点偏好和光致发光特性。光致发光结果表明，当=0.4时，量子产率高（88%）且吸收效率令人印象深刻（50%）。根据的值，近红外发射在很宽的范围内（713-820nm）可调。此外，使用450nm LED和[(GaCr)In]O荧光粉制造了一个磷光体转换近红外发光二极管（LED）器件的原型，在60mA电流驱动下，其输出功率达到40.4mW，光电转换效率为25%，而所得器件能够识别使用可见光无法检测到的受损农产品。这些结果证明了这种荧光粉在近红外LED成像应用中的巨大潜力。
