Benhnia Amani, Watanabe Shinta, Tuerhong Rouzhaji, Nakaya Masato, Onoe Jun, Bucher Jean-Pierre
Institutde Physiqueet Chimiedes Matériaux de Strasbourg (IPCMS), Université de Strasbourg, CNRS, IPCMS UMR 7504, F-67034 Strasbourg, France.
Department of Energy Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
Nanomaterials (Basel). 2021 Jun 20;11(6):1618. doi: 10.3390/nano11061618.
The active material of optoelectronic devices must accommodate for contacts which serve to collect or inject the charge carriers. It is the purpose of this work to find out to which extent properties of organic optoelectronic layers change close to metal contacts compared to known properties of bulk materials. Bottom-up fabrication capabilities of model interfaces under ultrahigh vacuum and single-atom low temperature (LT)-STM spectroscopy with density functional theory (DFT) calculations are used to detect the spatial modifications of electronic states such as frontier-orbitals at interfaces. The system under consideration is made of a silver substrate covered with a blend of C and ZnPc molecules of a few monolayers. When C and ZnPc are separately adsorbed on Ag(111), they show distinct spectroscopic features in STM. However, when C is added to the ZnPc monolayer, it shows scanning tunneling spectra similar to ZnPc, revealing a strong interaction of C with the ZnPc induced by the substrate. DFT calculations on a model complex confirm the strong hybridization of C with ZnPc layer upon adsorption on Ag(111), thus highlighting the role of boundary layers where the donor-acceptor character is strongly perturbed. The calculation also reveals a significant charge transfer from the Ag to the complex that is likely responsible for a downward shift of the molecular LUMO in agreement with the experiment.
光电器件的活性材料必须适配用于收集或注入电荷载流子的接触电极。本工作的目的是弄清楚与块状材料的已知特性相比,有机光电器件层在靠近金属接触电极处的特性会在多大程度上发生变化。利用超高真空下模型界面的自下而上制造能力以及单原子低温(LT)-扫描隧道显微镜(STM)光谱结合密度泛函理论(DFT)计算,来检测诸如界面处前沿轨道等电子态的空间变化。所研究的体系由覆盖有几层C和ZnPc分子混合物的银基底构成。当C和ZnPc分别吸附在Ag(111)上时,它们在STM中呈现出不同的光谱特征。然而,当C添加到ZnPc单层中时,它显示出与ZnPc相似的扫描隧道谱,这揭示了C与由基底诱导的ZnPc之间存在强相互作用。对模型复合物的DFT计算证实了C在吸附到Ag(111)上时与ZnPc层的强杂化,从而突出了供体-受体特性受到强烈扰动的边界层的作用。计算还揭示了从Ag到复合物的显著电荷转移,这可能是导致分子最低未占分子轨道(LUMO)向下移动的原因,这与实验结果一致。