Anbinderis Maksimas, Ašmontas Steponas, Čerškus Aurimas, Gradauskas Jonas, Lučun Andžej, Šilėnas Aldis, Sužiedėlis Algirdas
Center for Physical Sciences and Technology, Savanorių Ave. 231, 02300 Vilnius, Lithuania.
Department of Physics, Vilnius Gediminas Technical University, Saulėtekio Ave. 11, 10223 Vilnius, Lithuania.
Sensors (Basel). 2021 Jun 30;21(13):4487. doi: 10.3390/s21134487.
The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the -AlGaAs layer ( = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve as reliable and inexpensive sensors of microwave radiation in the millimeter wavelength range; they sense electromagnetic radiation directly, without any external bias voltage at room temperature. The investigation revealed a strong dependence of the detection properties of the microwave diodes on AlAs mole fraction : in the K microwave frequency range, the median value of voltage responsivity is several volts per watt in the case of GaAs-based diodes ( = 0), and it substantially increases, reaching hundreds of volts per watt at higher values. Also, a model enabling us to forecast the responsivity of the sensor in other frequency ranges is proposed.
本文介绍了基于在半绝缘砷化镓衬底上外延生长的-AlGaAs层（= 0、0.15或0.3）制造的平面微波二极管的直流和高频电学特性的实验研究结果。这些二极管可作为毫米波波长范围内可靠且廉价的微波辐射传感器；它们在室温下无需任何外部偏置电压即可直接感应电磁辐射。研究发现，微波二极管的检测特性强烈依赖于AlAs摩尔分数：在K微波频率范围内，基于GaAs的二极管（= 0）的电压响应率中值为每瓦几伏，而在较高值时，该值会大幅增加，达到每瓦数百伏。此外，还提出了一个模型，使我们能够预测传感器在其他频率范围内的响应率。
