Klotzsche Max, Barreca Davide, Bigiani Lorenzo, Seraglia Roberta, Gasparotto Alberto, Vanin Laura, Jandl Christian, Pöthig Alexander, Roverso Marco, Bogialli Sara, Tabacchi Gloria, Fois Ettore, Callone Emanuela, Dirè Sandra, Maccato Chiara
Department of Chemical Sciences - Padova University and INSTM, Via Marzolo 1, 35131 Padova, Italy.
CNR-ICMATE and INSTM - Department of Chemical Sciences - Padova University, Via Marzolo 1, 35131 Padova, Italy.
Dalton Trans. 2021 Aug 4;50(30):10374-10385. doi: 10.1039/d1dt01650d.
Co3O4 thin films and nanosystems are implemented in a broad range of functional systems, including gas sensors, (photo)catalysts, and electrochemical devices for energy applications. In this regard, chemical vapor deposition (CVD) is a promising route for the fabrication of high-quality films in which the precursor choice plays a key role in the process development. In this work, a heteroleptic cobalt complex bearing fluorinated diketonate ligands along with a diamine moiety [Co(tfa)2·TMEDA; tfa = 1,1,1-trifluoro-2,4-pentanedionate and TMEDA = N,N,N',N'-tetramethylethylenediamine] is investigated as a potential Co molecular precursor for the CVD of Co3O4 systems. For the first time, the compound is characterized by crystal structure determination and comprehensive analytical studies, focusing also on its thermal properties and fragmentation patterns, important figures of merit for a CVD precursor. The outcomes of this investigation, accompanied by detailed theoretical studies, highlight its very favorable properties for CVD applications. In fact, growth experiments under oxygen atmospheres containing water vapor revealed the suitability of Co(tfa)2·TMEDA for the fabrication of high-quality, phase-pure Co3O4 thin films. The versatility of the proposed strategy in tailoring Co3O4 structural/morphological features highlights its potential to obtain multi-functional films with controllable properties for a variety of eventual technological end-uses.
Co3O4薄膜和纳米系统被应用于广泛的功能系统中，包括气体传感器、（光）催化剂以及用于能源应用的电化学装置。在这方面，化学气相沉积（CVD）是制备高质量薄膜的一种有前景的方法，其中前驱体的选择在工艺开发中起着关键作用。在这项工作中，研究了一种带有氟化二酮配体和二胺部分的杂配钴配合物[Co(tfa)2·TMEDA；tfa = 1,1,1 - 三氟 - 2,4 - 戊二酮，TMEDA = N,N,N',N' - 四甲基乙二胺]作为Co3O4系统CVD的潜在Co分子前驱体。该化合物首次通过晶体结构测定和全面的分析研究进行表征，同时还关注其热性能和碎片化模式，这些是CVD前驱体的重要品质因数。这项研究的结果，伴随着详细的理论研究，突出了其在CVD应用中非常有利的性质。事实上，在含有水蒸气的氧气气氛下的生长实验表明Co(tfa)2·TMEDA适用于制备高质量、相纯的Co3O4薄膜。所提出策略在定制Co3O4结构/形态特征方面的多功能性突出了其获得具有可控性质的多功能薄膜以用于各种最终技术用途的潜力。
