Zhang Boya, Liu Jingjing, Ren Ming, Wu Chao, Moran Thomas J, Zeng Songshan, Chavez Sonia E, Hou Zaili, Li Zongze, LaChance Anna Marie, Jow T Richard, Huey Bryan D, Cao Yang, Sun Luyi
Electrical Insulation Research Center, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA.
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, CT, 06269, USA.
Adv Mater. 2021 Aug;33(34):e2101374. doi: 10.1002/adma.202101374. Epub 2021 Jul 19.
The organic insulator-metal interface is the most important junction in flexible electronics. The strong band offset of organic insulators over the Fermi level of electrodes should theoretically impart a sufficient impediment for charge injection known as the Schottky barrier. However, defect formation through Anderson localization due to topological disorder in polymers leads to reduced barriers and hence cumbersome devices. A facile nanocoating comprising hundreds of highly oriented organic/inorganic alternating nanolayers is self-coassembled on the surface of polymer films to revive the Schottky barrier. Carrier injection over the enhanced barrier is further shunted by anisotropic 2D conduction. This new interface engineering strategy allows a significant elevation of the operating field for organic insulators by 45% and a 7× improvement in discharge efficiency for Kapton at 150 °C. This superior 2D nanocoating thus provides a defect-tolerant approach for effective reviving of the Schottky barrier, one century after its discovery, broadly applicable for flexible electronics.
有机绝缘体 - 金属界面是柔性电子学中最重要的结。从理论上讲，有机绝缘体在电极费米能级上的强能带偏移应该会对电荷注入产生足够的阻碍，即所谓的肖特基势垒。然而，由于聚合物中的拓扑无序通过安德森局域化形成缺陷，导致势垒降低，从而使器件变得麻烦。一种由数百个高度取向的有机/无机交替纳米层组成的简便纳米涂层在聚合物薄膜表面自组装，以恢复肖特基势垒。通过各向异性二维传导，增强势垒上的载流子注入进一步被分流。这种新的界面工程策略使有机绝缘体的工作场强显著提高了45%，并使Kapton在150°C时的放电效率提高了7倍。因此，这种优异的二维纳米涂层提供了一种容错方法，可有效恢复肖特基势垒，自其发现一个世纪以来，广泛适用于柔性电子学。
