Tong Jingnan, Le Tien T, Liang Wensheng, Hossain Md Anower, McIntosh Keith R, Narangari Parvathala, Armand Stephane, Kho Teng C, Khoo Kean T, Zakaria Yahya, Abdallah Amir A, Surve Sachin, Ernst Marco, Hoex Bram, Fong Kean Chern
Research School of Engineering, The Australian National University, Canberra, ACT 2601, Australia.
School of Photovoltaic and Renewable Energy Engineering, UNSW Sydney, NSW 2052, Australia.
ACS Appl Mater Interfaces. 2021 Aug 4;13(30):36426-36435. doi: 10.1021/acsami.1c06765. Epub 2021 Jul 25.
Thin SiO interlayers are often formed naturally during the deposition of transition metal oxides on silicon surfaces due to interfacial reaction. The SiO layer, often only several atomic layers thick, becomes the interface between the Si and deposited metal oxide and can therefore influence the electrical properties and thermal stability of the deposited stack. This work explores the potential benefits of controlling the properties of the SiO interlayer by the introduction of pregrown high-quality SiO which also inhibits the formation of low-quality SiO from the metal-oxide deposition process. This work demonstrates that a high-quality pregrown SiO can reduce the interfacial reaction and results in a more stoichiometric MoO with improved surface passivation and thermal stability linked to its lower . Detailed experimental data on carrier selectivity, carrier transport efficiency, annealing stability up to 250 °C, and in-depth material analysis are presented.
由于界面反应，在硅表面沉积过渡金属氧化物的过程中常常会自然形成薄的SiO中间层。SiO层通常只有几个原子层厚，成为Si与沉积的金属氧化物之间的界面，因此会影响沉积堆叠层的电学性能和热稳定性。这项工作探索了通过引入预生长的高质量SiO来控制SiO中间层性能的潜在益处，预生长的高质量SiO还能抑制金属氧化物沉积过程中低质量SiO的形成。这项工作表明，高质量的预生长SiO可以减少界面反应，并产生化学计量比更合适的MoO，其表面钝化和热稳定性得到改善，这与其较低的[此处原文缺失相关内容]有关。文中给出了关于载流子选择性、载流子传输效率高达250°C的退火稳定性以及深入的材料分析的详细实验数据。
