Fu Pengfei, Sun Yuling, Xia Zhiguo, Xiao Zewen
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
College of Life Science and Technology, National Engineering Research Center for Nanomedicine, Huazhong University of Science and Technology, Wuhan 430074, China.
J Phys Chem Lett. 2021 Aug 12;12(31):7394-7399. doi: 10.1021/acs.jpclett.1c02154. Epub 2021 Jul 30.
Zero-dimensional hybrid manganese halides with the type-I band alignment between the manganese halide tetrahedra and organic matrices have attracted much attention as highly efficient narrow-band green emitters. Herein we study the photoluminescence (PL) behavior of hybrid manganese bromides with type-II band alignment, where the lowest unoccupied molecular orbital (LUMO) level can be tuned by employing quaternary phosphonium dications with different degrees of conjugation. For low-conjugated organic matrices, the band alignment can shift from type II in the ground state to type I in the excited state, which enables high photoluminescence quantum yields. In contrast, for high-conjugated organic matrices, the band alignment cannot convert to type I in the excited state because the LUMO lies too low, and thus, the excited electrons are transferred from the tetrahedra to the matrices, which leads to severe PL quenching. Our results show the importance of the excited-state band alignment for understanding the PL behavior of hybrid metal halide semiconductors.
卤化锰四面体与有机基质之间具有I型能带排列的零维杂化卤化锰,作为高效窄带绿色发光体备受关注。在此,我们研究了具有II型能带排列的杂化溴化锰的光致发光(PL)行为,其中最低未占据分子轨道(LUMO)能级可通过使用具有不同共轭程度的季鏻二价阳离子进行调节。对于低共轭有机基质,能带排列可从基态的II型转变为激发态的I型,这使得光致发光量子产率较高。相比之下,对于高共轭有机基质,由于LUMO能级过低,能带排列在激发态无法转变为I型,因此,激发电子从四面体转移到基质,导致严重的PL猝灭。我们的结果表明了激发态能带排列对于理解杂化金属卤化物半导体PL行为的重要性。