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双半赫斯勒合金MnCoCrZ(Z = P,As)的半金属性、磁性和自旋输运性质研究

Investigation of the half-metallicity, magnetism and spin transport properties of double half-Heusler alloys MnCoCrZ (Z = P, As).

作者信息

Cui Zhou, Ding Haonan, Feng Yu

机构信息

School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, People's Republic of China.

出版信息

Phys Chem Chem Phys. 2021 Sep 7;23(33):17984-17991. doi: 10.1039/d1cp01579f. Epub 2021 Aug 12.

Abstract

A new subfamily of Heusler alloys, i.e. double half-Heusler alloys MnCoCrZ (Z = P, As), are investigated by employing density functional theory combined with the nonequilibrium Green's function. The calculations of their magnetic properties reveal that MnCoCrZ (Z = P, As) are half-metallic ferrimagnets. MnCoCrP possesses an indirect spin-down bandgap of 0.671 eV and maintains half-metallicity with the lattice constant ratio c/a ranging from 1.72 to 2.40, while MnCoCrAs owns a direct spin-down bandgap of 0.993 eV and maintains half-metallicity with c/a ranging from 1.5 to 2.5. By employing MnCoCrZ as the electrodes and GaAs as the tunnel barrier, two kinds of magnetic tunnel junctions (MTJs) are constructed. When two electrodes of MTJs are in parallel magnetic configuration, the spin-up electrons have strong transmission ability, while the transmission ability of spin-down electrons is severely suppressed. When two electrodes of MTJs are in antiparallel magnetic configuration, the transmission ability of both spin-channel electrons is suppressed. The calculated tunnel magnetoresistance ratios of MnCoCrP/GaAs/MnCoCrP and MnCoCrAs/GaAs/MnCoCrAs MTJs reach up to 7.96 × 10 and 1.85 × 10, respectively, indicating that they are promising candidates for high performance spintronic devices.

摘要

通过采用密度泛函理论结合非平衡格林函数,对一种新型的赫斯勒合金亚族,即双半赫斯勒合金MnCoCrZ(Z = P,As)进行了研究。对其磁性能的计算表明,MnCoCrZ(Z = P,As)是半金属亚铁磁体。MnCoCrP具有0.671 eV的间接自旋向下带隙,并且在晶格常数比c/a为1.72至2.40的范围内保持半金属性,而MnCoCrAs拥有0.993 eV的直接自旋向下带隙,并且在c/a为1.5至2.5的范围内保持半金属性。通过将MnCoCrZ用作电极并将GaAs用作隧道势垒,构建了两种磁性隧道结(MTJ)。当MTJ的两个电极处于平行磁配置时,自旋向上的电子具有很强的传输能力,而自旋向下的电子的传输能力受到严重抑制。当MTJ的两个电极处于反平行磁配置时,两个自旋通道电子的传输能力均受到抑制。MnCoCrP/GaAs/MnCoCrP和MnCoCrAs/GaAs/MnCoCrAs MTJ的计算隧道磁电阻比分别达到7.96×10和1.85×10,表明它们是高性能自旋电子器件的有前途的候选材料。

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