Jin Min, Liang Jiasheng, Qiu Pengfei, Huang Hui, Yue Zhongmou, Zhou Lina, Li Rongbin, Chen Lidong, Shi Xun
College of Materials, Shanghai Dianji University, Shanghai 201306, China.
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
J Phys Chem Lett. 2021 Sep 2;12(34):8246-8255. doi: 10.1021/acs.jpclett.1c02139. Epub 2021 Aug 23.
Silver selenide, AgSe, is a promising low-temperature thermoelectric material which can be used to harvest the low-quality waste heat for electrical power generation or cool the microelectronics. Currently, the investigation on AgSe and its derivatives has become a hot topic in the thermoelectric community, but the thermoelectric properties of AgSe below 300 K have been rarely investigated. In this study, we prepared AgSe by using the zone-melting method. The electrical and thermal transport properties of zone-melted AgSe from 5 to 380 K were systematically investigated and compared with the previously reported data of AgSe and other typical low-temperature thermoelectric materials, such as MgBi, BiTe, and BiSb. AgSe shows intrinsic semiconductor features, ultrahigh carrier mobility, small density-of-state effective mass, and ultralow lattice thermal conductivity. At 300 K, the of zone-melted AgSe is 0.75. This study will shed light on the further investigation of AgSe.
硒化银（AgSe）是一种很有前景的低温热电材料，可用于收集低品位废热以发电或冷却微电子设备。目前，对AgSe及其衍生物的研究已成为热电领域的一个热门话题，但AgSe在300 K以下的热电性能鲜有研究。在本研究中，我们采用区熔法制备了AgSe。系统研究了区熔AgSe在5至380 K范围内的电输运和热输运性质，并与先前报道的AgSe以及其他典型低温热电材料（如MgBi、BiTe和BiSb）的数据进行了比较。AgSe具有本征半导体特性、超高载流子迁移率、小的态密度有效质量和超低的晶格热导率。在300 K时，区熔AgSe的 为0.75。本研究将为AgSe的进一步研究提供启示。
