Zhang Shuai, Yuan Longfei, Liu Hongli, Zhou Guofu, Ding Weigang, Qin Zhanpeng, Li Xianggao, Wang Shirong
School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China.
Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China.
J Phys Chem Lett. 2021 Sep 9;12(35):8507-8512. doi: 10.1021/acs.jpclett.1c02519. Epub 2021 Aug 30.
Perovskite-based white-light-emitting devices (WLEDs) are expected to be the potential candidate for the next-generation lighting field due to their scalability and low-cost process. However, simple and adjustable WLED fabrication technology is in urgent need. Here, WLEDs with a single layer of perovskite quantum dots (PQDs) were constructed by combining Zn-doped CsPbBr PQDs with exciplex emission between poly(9-vinylcarbazole) (PVK) and ((1-phenyl-1-benzimidazol-2-yl)benzene)) (TPBi). Zn-doped CsPbBr PQDs with polar ion shells were prepared by means of low temperature and post-treatment. The photoluminescence quantum yield (PLQY) can reach as high as 95.9% at the emission wavelength of 456 nm. The blue shift of its PL (∼60 nm) is much greater than that of other reported Zn-doped CsPbBr PQDs (5-10 nm), thus realizing the true blue-emission Zn-doped CsPbBr PQDs. As a result, just by controlling the thickness of TPBi, the adjustment of cold (CIE (0.2531, 0.2502)) and warm WLEDs (CIE (0.3561, 0.3562)) is realized for the first time.
基于钙钛矿的白光发光器件（WLED）因其可扩展性和低成本工艺，有望成为下一代照明领域的潜在候选者。然而，迫切需要简单且可调节的WLED制造技术。在此，通过将锌掺杂的CsPbBr量子点（PQD）与聚（9-乙烯基咔唑）（PVK）和（（1-苯基-1-苯并咪唑-2-基）苯））（TPBi）之间的激基复合物发射相结合，构建了具有单层钙钛矿量子点（PQD）的WLED。通过低温和后处理制备了具有极性离子壳的锌掺杂CsPbBr量子点。在456nm发射波长下，光致发光量子产率（PLQY）可高达95.9%。其PL的蓝移（约60nm）远大于其他报道的锌掺杂CsPbBr量子点（5-10nm），从而实现了真正的蓝光发射锌掺杂CsPbBr量子点。结果，仅通过控制TPBi的厚度，首次实现了冷白光发光二极管（CIE（0.2531,0.2502））和暖白光发光二极管（CIE（0.3561,0.3562））的调节。
