Friedman Alex, Nejadriahi Hani, Sharma Rajat, Fainman Yeshaiahu
Opt Lett. 2021 Sep 1;46(17):4236-4239. doi: 10.1364/OL.432359.
We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, , as high as (6±0.58)×10/. We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.
我们在等离子体增强化学气相沉积（PECVD）富硅氮化物（SRN）中展示了直流克尔效应，并利用它证明了高达(6±0.58)×10⁻¹²的三阶非线性极化率χ(³)。我们采用在环形谐振器中测量光谱 shift 与施加电压的关系作为表征这些薄膜非线性极化率的工具。通过这样做，我们证明了χ(³)比硅的大，并认为PECVD SRN可以提供一个通用平台，用于采用光学移相器，同时使用CMOS工艺流程中现成的沉积技术保持低热预算。
