Guo San-Dong, Mu Wen-Qi, Xiao Xiang-Bo, Liu Bang-Gui
School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China.
Nanoscale. 2021 Aug 14;13(30):12956-12965. doi: 10.1039/d1nr02819g. Epub 2021 Jul 21.
A two-dimensional (2D) material with piezoelectricity, topological and ferromagnetic (FM) properties, namely a 2D piezoelectric quantum anomalous hall insulator (PQAHI), may open new opportunities to realize novel physics and applications. Here, by first-principles calculations, a family of 2D Janus monolayer FeIX (X = Cl and Br) with dynamic, mechanical, and thermal stabilities is predicted to be a room-temperature PQAHI. In the absence of spin-orbit coupling (SOC), the monolayer FeIX (X = Cl and Br) is in a half Dirac semimetal state. When the SOC is included, these monolayers become quantum anomalous Hall (QAH) states with sizable gaps (more than 200 meV) and two chiral edge modes (Chern number C = 2). It is also found that the monolayer FeIX (X = Cl and Br) possesses robust QAH states against the biaxial strain. By symmetry analysis, it is found that only an out-of-plane piezoelectric response can be induced by a uniaxial strain in the basal plane. The calculated out-of-plane d of FeICl (FeIBr) is 0.467 pm V (0.384 pm V), which is higher than or comparable with those of other 2D known materials. Meanwhile, using Monte Carlo (MC) simulations, the Curie temperature T is estimated to be 429/403 K for the monolayer FeICl/FeIBr at the FM ground state, which is above room temperature. Finally, the interplay of electronic correlations with nontrivial band topology is studied to confirm the robustness of the QAH state. The combination of piezoelectricity, topological and FM orders makes the monolayer FeIX (X = Cl and Br) become a potential platform for multi-functional spintronic applications with a large gap and high T. Our work provides the possibility to use the piezotronic effect to control QAH effects, and can stimulate further experimental works.
一种具有压电性、拓扑性和铁磁性(FM)特性的二维(2D)材料,即二维压电量子反常霍尔绝缘体(PQAHI),可能为实现新颖物理现象和应用带来新机遇。在此,通过第一性原理计算,预测了一族具有动力学、力学和热稳定性的二维Janus单层FeIX(X = Cl和Br)为室温PQAHI。在没有自旋轨道耦合(SOC)的情况下,单层FeIX(X = Cl和Br)处于半狄拉克半金属态。当包含SOC时,这些单层变为具有可观能隙(超过200 meV)和两个手性边缘模式(陈数C = 2)的量子反常霍尔(QAH)态。还发现单层FeIX(X = Cl和Br)对双轴应变具有稳健的QAH态。通过对称性分析发现,基面内的单轴应变仅能诱导出平面外的压电响应。计算得到的FeICl(FeIBr)的平面外d为0.467 pm V(0.384 pm V),高于或与其他已知二维材料相当。同时,使用蒙特卡罗(MC)模拟,估计单层FeICl/FeIBr在FM基态下的居里温度T为429/403 K,高于室温。最后,研究了电子关联与非平凡能带拓扑结构的相互作用,以确认QAH态的稳健性。压电性、拓扑性和FM序的结合使单层FeIX(X = Cl和Br)成为具有大能隙和高T的多功能自旋电子学应用的潜在平台。我们的工作为利用压电子效应控制QAH效应提供了可能性,并能激发进一步的实验工作。