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癫痫患者迷走神经刺激器治疗后灰质和白质微观结构的变化。

Grey and white matter microstructure changes in epilepsy patients with vagus nerve stimulators.

机构信息

Beijing Institute of Functional Neurosurgery, Xuanwu Hospital, Capital Medical University, No. 45 Changchun Street, Xicheng District, Beijing 100053, China.

Beijing Institute of Functional Neurosurgery, Xuanwu Hospital, Capital Medical University, No. 45 Changchun Street, Xicheng District, Beijing 100053, China.

出版信息

Clin Neurol Neurosurg. 2021 Oct;209:106918. doi: 10.1016/j.clineuro.2021.106918. Epub 2021 Aug 28.

Abstract

OBJECTIVES

Vagus nerve stimulation (VNS) has been widely used as an effective treatment for patients with drug-resistant epilepsy (DRE). However, little is known about grey matter (GM) and white matter (WM) microstructure changes caused by VNS. This study aimed to detect consistent GM and WM alterations in epilepsy patients with vagus nerve stimulators.

METHODS

The diffusion tensor imaging data was acquired from 15 patients who underwent VNS implantation. The voxel-based morphometry (VBM) and tract-based spatial statistics (TBSS) were used to detect group differences in GM and WM microstructure and explore their correlation with postoperative seizure reduction.

RESULTS

After 3 months of stimulation, GM density reduced in right cerebellum, left superior temporal gyrus, right inferior temporal gyrus and left thalamus, and increased in left cerebellum, left inferior parietal lobule, left middle occipital gyrus and left gyrus rectus. No significant volume changes had been found in 14 subcortical nuclei. The fractional anisotropy (FA) values reduced in left superior longitudinal fasciculus and left corticospinal tract, and increased in bilateral cingulum and body of corpus callosum. The mean diffusivity (MD) values reduced in right retrolenticular part of internal capsule, right posterior corona radiata and right superior longitudinal fasciculus. The seizure reduction had positive correlation trends with the volume reduction in left nucleus accumbens and right amygdala, and MD reduction in right medial lemniscus and right posterior corona radiata.

CONCLUSIONS

The results showed that VNS could cause changes of GM density, WM FA and MD values in epilepsy patients. The volume and MD reduction in some subcortical structures might participate in the seizure frequency reduction of VNS.

摘要

目的

迷走神经刺激(VNS)已广泛应用于治疗耐药性癫痫(DRE)患者,但其对大脑灰质(GM)和白质(WM)微观结构的影响尚不清楚。本研究旨在检测接受迷走神经刺激器治疗的癫痫患者的 GM 和 WM 微观结构的一致性变化。

方法

对 15 名接受 VNS 植入术的患者进行弥散张量成像(DTI)数据采集。采用基于体素的形态学(VBM)和基于束的空间统计学(TBSS)分析方法,检测 GM 和 WM 微观结构的组间差异,并探讨其与术后癫痫发作减少的相关性。

结果

刺激 3 个月后,右侧小脑、左侧颞上回、右侧颞下回和左侧丘脑 GM 密度降低,左侧小脑、左侧顶下小叶、左侧中枕叶和左侧直回 GM 密度增加。14 个皮质下核团体积未发生显著变化。左侧上纵束和左侧皮质脊髓束 FA 值降低,双侧扣带回和胼胝体体部 FA 值增加。右侧内囊后肢、右侧后放射冠和右侧上纵束 MD 值降低。癫痫发作减少与左侧伏隔核和右侧杏仁核体积减少,以及右侧内侧丘系和右侧后放射冠 MD 值减少呈正相关趋势。

结论

结果表明,VNS 可导致癫痫患者 GM 密度、WM FA 和 MD 值发生变化。一些皮质下结构的体积和 MD 值减少可能参与了 VNS 降低癫痫发作频率的机制。

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