应用于柔性电致变色器件的透明导电薄膜的低温沉积

Low-Temperature Deposition of Transparent Conducting Films Applied to Flexible Electrochromic Devices.

作者信息

Li Ke-Ding, Chen Po-Wen, Chang Kao-Shuo

机构信息

Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.

Division of Physics, Institute of Nuclear Energy Research, Taoyuan City 32546, Taiwan.

出版信息

Materials (Basel). 2021 Aug 31;14(17):4959. doi: 10.3390/ma14174959.

DOI:10.3390/ma14174959

PMID:34501052

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8433702/

Abstract

Here, we compare two different transparent conducting oxides (TCOs), namely indium tin oxide (ITO) and indium zinc tin oxide (IZTO), fabricated as transparent conducting films using processes that require different temperatures. ITO and IZTO films were prepared at 230 °C and at room temperature, respectively, on glass and polyethylene terephthalate (PET) substrates using reactive magnetron sputtering. Electrochromic WO films deposited on ITO-based and IZTO-based ECDs using vacuum cathodic arc plasma (CAP) were investigated. IZTO-based ECDs have higher optical transmittance modulation, ΔT = 63% [from T (90.01%) to T (28.51%)], than ITO-based ECDs, ΔT = 59%. ECDs consisted of a working electrochromic electrode (WO/IZTO/PET) and a counter-electrode (Pt mesh) in a 0.2 M LiClO/perchlorate (LiClO/PC) liquid electrolyte solution with an active area of 3 cm × 4 cm a calculated bleaching time t of 21.01 s and a coloration time t of 4.7 s with varying potential from -1.3 V (coloration potential, V) to 0.3 V (bleaching potential, V).

摘要

在此，我们比较了两种不同的透明导电氧化物（TCO），即氧化铟锡（ITO）和铟锌锡氧化物（IZTO），它们是使用需要不同温度的工艺制成透明导电薄膜的。ITO和IZTO薄膜分别在230℃和室温下，采用反应磁控溅射法在玻璃和聚对苯二甲酸乙二酯（PET）基板上制备。研究了使用真空阴极电弧等离子体（CAP）沉积在基于ITO和基于IZTO的电致变色器件（ECD）上的电致变色WO薄膜。基于IZTO的ECD具有比基于ITO的ECD更高的光学透过率调制，ΔT = 63%[从T（90.01%）到T（28.51%）]，而基于ITO的ECD的ΔT = 59%。ECD由工作电致变色电极（WO/IZTO/PET）和对电极（铂网）组成，置于0.2M高氯酸锂/高氯酸盐（LiClO/PC）液体电解质溶液中，有效面积为3cm×4cm，计算得出的漂白时间t为21.01s，着色时间t为4.7s，电位在-1.3V（着色电位，V）至0.3V（漂白电位，V）之间变化。