Poznyak Alexander, Knörnschild Gerhard, Karoza Anatoly, Norek Małgorzata, Pligovka Andrei
Department of Electronic Technology and Engineering, Belarusian State University of Informatics and Radioelectronics, 6 Brovki Str., 220013 Minsk, Belarus.
Research and Development Laboratory 4.10 "Nanotechnologies", Belarusian State University of Informatics and Radioelectronics, 6 Brovki Str., 220013 Minsk, Belarus.
Materials (Basel). 2021 Sep 6;14(17):5118. doi: 10.3390/ma14175118.
The influence of arsenazo-I additive on electrochemical anodizing of pure aluminum foil in malonic acid was studied. Aluminum dissolution increased with increasing arsenazo-I concentration. The addition of arsenazo-I also led to an increase in the volume expansion factor up to 2.3 due to the incorporation of organic compounds and an increased number of hydroxyl groups in the porous aluminum oxide film. At a current density of 15 mA·cm and an arsenazo-I concentration 3.5 g·L, the carbon content in the anodic alumina of 49 at. % was achieved. An increase in the current density and concentration of arsenazo-I caused the formation of an arsenic-containing compound with the formula NaAl(OH)(AsO)·7HO in the porous aluminum oxide film phase. These film modifications cause a higher number of defects and, thus, increase the ionic conductivity, leading to a reduced electric field in galvanostatic anodizing tests. A self-adjusting growth mechanism, which leads to a higher degree of self-ordering in the arsenazo-free electrolyte, is not operative under the same conditions when arsenazo-I is added. Instead, a dielectric breakdown mechanism was observed, which caused the disordered porous aluminum oxide film structure.
研究了偶氮胂-I添加剂对纯铝箔在丙二酸中进行电化学阳极氧化的影响。铝的溶解随着偶氮胂-I浓度的增加而增加。由于有机化合物的掺入以及多孔氧化铝膜中羟基数量的增加，偶氮胂-I的添加还导致体积膨胀系数增加至2.3。在电流密度为15 mA·cm且偶氮胂-I浓度为3.5 g·L时，阳极氧化铝中的碳含量达到49 at.%。电流密度和偶氮胂-I浓度的增加导致在多孔氧化铝膜相中形成化学式为NaAl(OH)(AsO)·7H₂O的含砷化合物。这些膜的改性导致更多的缺陷，从而增加了离子电导率，导致恒电流阳极氧化试验中的电场降低。在添加偶氮胂-I的相同条件下，在无偶氮胂的电解液中导致更高程度自有序化的自调节生长机制不起作用。相反，观察到一种介电击穿机制，它导致了多孔氧化铝膜结构的无序化。
