Ali Asad, Uddin Sarir, Lal Madan, Zaman Abid, Iqbal Zafar, Althubeiti Khaled
Department of Physics, Riphah International University, Islamabad, 44000, Pakistan.
Department of Physics, Government Post Graduate College, Nowshera, KP, Pakistan.
Sci Rep. 2021 Sep 9;11(1):17889. doi: 10.1038/s41598-021-97584-x.
Sn-doped BaTiO (BT4) dielectric ceramics were prepared by a mixed oxide route. Preliminary X-ray diffraction (XRD) structural study shows that the ceramic samples have orthorhombic symmetry with space group (Pnmm). Scanning electron microscopy (SEM) shows that the grain size of the samples decreases with an increase in Sn content. The presence of the metal oxide efficient group was revealed by Fourier transform infrared (FTIR) spectroscopy. The photoluminescence spectra of the ceramic samples reported red color ~ 603, 604, 606.5 and 605 nm with excitation energy ~ 2.06, 2.05, 2.04 and 2.05 eV for Sn content with x = 0.0, 0.3, 0.5, and 0.7, respectively. The microwave dielectric properties of these ceramic samples were investigated by an impedance analyzer. The excellent microwave dielectric properties i.e. high dielectric constant (ε = 57.29), high-quality factor (Q = 11,852), or low-dielectric loss (3.007) has been observed.
通过混合氧化物法制备了掺锡钛酸钡（BT4）介电陶瓷。初步的X射线衍射（XRD）结构研究表明，陶瓷样品具有正交对称性，空间群为（Pnmm）。扫描电子显微镜（SEM）表明，样品的晶粒尺寸随锡含量的增加而减小。通过傅里叶变换红外（FTIR）光谱揭示了金属氧化物有效基团的存在。对于锡含量分别为x = 0.0、0.3、0.5和0.7的陶瓷样品，光致发光光谱报告的红色波长约为603、604、606.5和605 nm，激发能量约为2.06、2.05、2.04和2.05 eV。通过阻抗分析仪研究了这些陶瓷样品的微波介电性能。观察到了优异的微波介电性能，即高介电常数（ε = 57.29）、高品质因数（Q = 11852）或低介电损耗（3.007）。
