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通过与MC MXenes的强界面实现MoS单层中的可控2H/1T相变:一项计算研究。

Controlled 2H/1T phase transition in MoS monolayers by a strong interface with MC MXenes: a computational study.

作者信息

Wang Zhongxu, Liu Yu, Li FengYu, Zhao Jingxiang

机构信息

Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China.

School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China.

出版信息

Phys Chem Chem Phys. 2021 Sep 22;23(36):20107-20116. doi: 10.1039/d1cp02648h.

Abstract

Due to the high conductivity and abundant active sites, the metallic 1T phase of a two-dimensional molybdenum sulfide monolayer (1T-MoS) has witnessed a broad range of potential applications in catalysis, and spintronic and phase-switching devices, which, however, are greatly hampered by its poor stability. Thus, the development of particular strategies to realize the phase transition from the stable 2H phase to the metastable 1T phase for MoS nanosheets is highly desirable. Herein, by means of density functional theory (DFT) computations, we systematically explored the potential of the interfacial interaction of 2H- and 1T-MoS monolayers with a series of MC MXenes (M = Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W) for achieving the 2H/1T phase transformation. Our results revealed that the 2H → 1T transition for MoS monolayers can occur thermodynamically by anchoring on TiC, ZrC, or HfC substrates with the extremely strong metal-S interaction, which can be well rationalized by the analysis of the charge transfer, work function, and density of states. Specially, these obtained stable 1T-MoS/MC hybrid materials exhibit excellent metallic features, outstanding magnetism, and enhanced mechanical properties. Our findings provide a new avenue to tune the phase transformation for MoS monolayers by strong interfacial interactions, which helps to further widen the potential applications of MoS monolayers.

摘要

由于具有高导电性和丰富的活性位点,二维硫化钼单层(1T-MoS)的金属1T相在催化、自旋电子学和相变器件等领域展现出广泛的潜在应用,然而,其稳定性较差极大地阻碍了这些应用。因此,非常需要开发特定策略来实现MoS纳米片从稳定的2H相到亚稳的1T相的相变。在此,借助密度泛函理论(DFT)计算,我们系统地探索了2H-和1T-MoS单层与一系列MC MXenes(M = Ti、V、Cr、Zr、Nb、Mo、Hf、Ta和W)的界面相互作用在实现2H/1T相变方面的潜力。我们的结果表明,通过锚定在具有极强金属 - S相互作用的TiC、ZrC或HfC衬底上,MoS单层的2H→1T转变可以在热力学上发生,这可以通过对电荷转移、功函数和态密度的分析得到很好的解释。特别地,这些获得的稳定的1T-MoS/MC杂化材料表现出优异的金属特性、出色的磁性和增强的机械性能。我们的发现为通过强界面相互作用调节MoS单层的相变提供了一条新途径,这有助于进一步拓宽MoS单层的潜在应用。

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