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P1 染料热激态向 p 型染料敏化薄膜中进行空穴注入:荧光研究。

Hole injection from P1 dye hot-excited states in p-type dye-sensitized films: a fluorescence study.

机构信息

CEA, CNRS, LIDYL, Université Paris-Saclay, 91191, Gif-sur-Yvette, France.

CEA, CNRS, NIMBE, LICSEN, Université Paris-Saclay, 91191, Gif-sur-Yvette, France.

出版信息

Photochem Photobiol Sci. 2021 Oct;20(10):1257-1271. doi: 10.1007/s43630-021-00098-8. Epub 2021 Sep 20.

Abstract

We present a study of the excited state relaxation dynamics of the photosensitizer P1 used in p-type dye-sensitized solar cells. Comparative femtosecond fluorescence upconversion measurements in solution and in films show that the dye undergoes a picosecond electronic relaxation from the bright Franck-Condon (FC) state to a low-emitting charge-transfer (CT) state in polar environment. The fluorescence is moderately quenched in solution and on the mesoporous AlO isolator but dramatically more on NiO semiconductor. We assign this sub-picosecond process to the hole injection thus confirming that the electron transfer is from the FC state directly into the NiO valence band.

摘要

我们研究了用于 p 型染料敏化太阳能电池的光敏剂 P1 的激发态弛豫动力学。在溶液和薄膜中的比较飞秒荧光上转换测量表明,该染料在极性环境中从明亮的 Franck-Condon(FC)态经历皮秒级电子弛豫到低发射电荷转移(CT)态。在溶液中和介孔 AlO 隔离器中,荧光被适度猝灭,但在 NiO 半导体中则显著猝灭。我们将这个亚皮秒过程归因于空穴注入,从而证实电子转移是直接从 FC 态进入 NiO 价带。

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