Zhao Yu, Ye Jun, Wang Hao, Zhang Fan, Sun Muhua, Yu Bohan, Wang Jianlin, Liu Yu, Shan Xinyan, Bai Xuedong, Wang Wenlong
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China.
J Phys Chem Lett. 2021 Oct 7;12(39):9475-9480. doi: 10.1021/acs.jpclett.1c02751. Epub 2021 Sep 24.
The optical second harmonic generation (SHG) efficiency of hexagonal boron nitride (h-BN) layered materials is profoundly influenced by the symmetry properties, which has severely limited the usefulness of their SHG for nonlinear optical applications. Herein, we report on the controlled growth of large-area and continuous ultrathin h-BN films with a high density of exposed edges that show strongly enhanced SHG, owing to the breaking of inversion symmetry occurring naturally at edge sites. The large-area growth of edge-enriched BN films was accomplished through the introduction of Turing instability into a growth process that involves the liquid-gas interface self-limiting reaction between molten boron oxide (BO) with gaseous ammonia (NH) at elevated temperature. Remarkably, the edge-enriched BN films give rise to a SHG response up to nearly 3 orders of magnitude higher than that of the smooth BN films prepared through the same growth approach but with different growth parameters.
六方氮化硼(h-BN)层状材料的光学二次谐波产生(SHG)效率受到对称性的深刻影响,这严重限制了其在非线性光学应用中的SHG实用性。在此,我们报道了大面积连续超薄h-BN薄膜的可控生长,这些薄膜具有高密度的暴露边缘,由于边缘位点自然发生的反演对称性破缺,其SHG显著增强。通过在高温下将图灵不稳定性引入涉及氧化硼(BO)与气态氨(NH)的液-气界面自限反应的生长过程中,实现了富含边缘的BN薄膜的大面积生长。值得注意的是,富含边缘的BN薄膜产生的SHG响应比通过相同生长方法但不同生长参数制备的光滑BN薄膜高出近3个数量级。