Yoo Junhyuk, Jung Uijin, Jung Bomseumin, Shen Wenhu, Park Jinsub
Department of Electronics & Computer Engineering, Hanyang University, Seoul 04763, Korea.
Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea.
Sensors (Basel). 2021 Sep 13;21(18):6124. doi: 10.3390/s21186124.
Although ZnO nanostructure-based photodetectors feature a well-established system, they still present difficulties when being used in practical situations due to their slow response time. In this study, we report on how forming an amorphous SnO (a-SnO) shell layer on ZnO nanorods (NRs) enhances the photoresponse speed of a ZnO-based UV photodetector (UV PD). Our suggested UV PD, consisting of a ZnO/a-SnO NRs core-shell structure, shows a rise time that is 26 times faster than a UV PD with bare ZnO NRs under 365 nm UV irradiation. In addition, the light responsivity of the ZnO/SnO NRs PD simultaneously increases by 3.1 times, which can be attributed to the passivation effects of the coated a-SnO shell layer. With a wide bandgap (~4.5 eV), the a-SnO shell layer can successfully suppress the oxygen-mediated process on the ZnO NRs surface, improving the photoresponse properties. Therefore, with a fast photoresponse speed and a low fabrication temperature, our as-synthesized, a-SnO-coated ZnO core-shell structure qualifies as a candidate for ZnO-based PDs.
尽管基于氧化锌纳米结构的光电探测器是一个成熟的体系,但由于其响应时间较慢,在实际应用中仍存在困难。在本研究中,我们报告了在氧化锌纳米棒(NRs)上形成非晶态氧化锡(a-SnO)壳层如何提高基于氧化锌的紫外光电探测器(UV PD)的光响应速度。我们提出的由氧化锌/a-SnO纳米棒核壳结构组成的紫外光电探测器,在365nm紫外光照射下,其上升时间比具有裸露氧化锌纳米棒的紫外光电探测器快26倍。此外,氧化锌/氧化锡纳米棒光电探测器的光响应度同时提高了3.1倍,这可归因于涂覆的a-SnO壳层的钝化作用。由于a-SnO壳层具有宽带隙(约4.5eV),它可以成功抑制氧化锌纳米棒表面的氧介导过程,改善光响应性能。因此,我们合成的涂覆a-SnO的氧化锌核壳结构具有快速的光响应速度和较低的制备温度,有资格作为基于氧化锌的光电探测器的候选材料。