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硅甲基氟(Si(CH)F)单分子解离的冲击波与建模研究:获取SiF光谱和动力学性质的途径

Shock wave and modelling study of the unimolecular dissociation of Si(CH)F: an access to spectroscopic and kinetic properties of SiF.

作者信息

Cobos C J, Sölter L, Tellbach E, Troe J

机构信息

INIFTA, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CONICET, Argentina.

Institut für Physikalische Chemie, Universität Göttingen, Tammannstrasse 6, D-37077 Göttingen, Germany.

出版信息

Phys Chem Chem Phys. 2021 Oct 13;23(39):22437-22442. doi: 10.1039/d1cp03298d.

Abstract

The thermal dissociation of Si(CH)F was studied in shock waves between 1400 and 1900 K. UV absorption-time profiles of its dissociation products SiF and CH were monitored. The reaction proceeds as a unimolecular process not far from the high-pressure limit. Comparing modelled and experimental results, an asymmetric representation of the falloff curves was shown to be most realistic. Modelled limiting high-pressure rate constants agreed well with the experimental data. The UV absorption spectrum of SiF was shown to be quasi-continuous, with a maximum near 222 nm and a wavelength-integrated absorption cross section of 4.3 (±1) × 10 cm (between 195 and 255 nm, base e), the latter being consistent with radiative lifetimes from the literature. Experiments over the range 1900-3200 K showed that SiF was not consumed by a simple bond fission SiF →SiF + F, but by a bimolecular reaction SiF + SiF → SiF + SiF (rate constant in the range 10-10 cm mol s), followed by the unimolecular dissociation SiF → SiF + F such that the reaction becomes catalyzed by the reactant SiF. The analogy to a pathway CF + CF → CF + CF, followed by CF → CF + F, in high-temperature fluorocarbon chemistry is stressed. Besides the high-temperature absorption cross sections of SiF, analogous data for SiF are also reported.

摘要

在1400至1900K的冲击波中研究了Si(CH)F的热解离。监测了其解离产物SiF和CH的紫外吸收-时间曲线。该反应以接近高压极限的单分子过程进行。将模拟结果与实验结果进行比较,结果表明,衰减曲线的非对称表示最为现实。模拟的极限高压速率常数与实验数据吻合良好。SiF的紫外吸收光谱显示为准连续光谱,在222nm附近有一个最大值,波长积分吸收截面为4.3(±1)×10 cm(在195至255nm之间,自然底数e),后者与文献中的辐射寿命一致。在1900至3200K范围内的实验表明,SiF不是通过简单的键断裂SiF→SiF + F消耗,而是通过双分子反应SiF + SiF→SiF + SiF(速率常数在10 - 10 cm mol s范围内),随后是单分子解离SiF→SiF + F,使得反应由反应物SiF催化。强调了与高温氟碳化学中CF + CF→CF + CF,随后是CF→CF + F的反应路径的类比。除了SiF的高温吸收截面外,还报告了SiF的类似数据。

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