Hight-Huf Nicholas, Nagar Yehiel, Levi Adi, Pagaduan James Nicolas, Datar Avdhoot, Katsumata Reika, Emrick Todd, Ramasubramaniam Ashwin, Naveh Doron, Barnes Michael D
Department of Chemistry, University of Massachusetts, Amherst, Massachusetts 01003, United States.
Faculty of Engineering and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel.
ACS Appl Mater Interfaces. 2021 Oct 13;13(40):47945-47953. doi: 10.1021/acsami.1c13505. Epub 2021 Oct 4.
We investigated the nature of graphene surface doping by zwitterionic polymers and the implications of weak in-plane and strong through-plane screening using a novel sample geometry that allows direct access to either the graphene or the polymer side of a graphene/polymer interface. Using both Kelvin probe and electrostatic force microscopies, we observed a significant upshift in the Fermi level in graphene of ∼260 meV that was dominated by a change in polarizability rather than pure charge transfer with the organic overlayer. This physical picture is supported by density functional theory (DFT) calculations, which describe a redistribution of charge in graphene in response to the dipoles of the adsorbed zwitterionic moieties, analogous to a local DC Stark effect. Strong metallic-like screening of the adsorbed dipoles was observed by employing an inverted geometry, an effect identified by DFT to arise from a strongly asymmetric redistribution of charge confined to the side of graphene proximal to the zwitterion dipoles. Transport measurements confirm n-type doping with no significant impact on carrier mobility, thus demonstrating a route to desirable electronic properties in devices that combine graphene with lithographically patterned polymers.
我们使用一种新颖的样品几何结构研究了两性离子聚合物对石墨烯表面掺杂的性质,以及弱面内和强穿面屏蔽的影响,这种结构能够直接接触石墨烯/聚合物界面的石墨烯侧或聚合物侧。通过开尔文探针和静电力显微镜,我们观察到石墨烯的费米能级显著上移约260毫电子伏特,这主要由极化率的变化主导,而非与有机覆盖层的纯电荷转移。这一物理图像得到了密度泛函理论(DFT)计算的支持,该计算描述了石墨烯中电荷因吸附的两性离子部分的偶极而重新分布,类似于局部直流斯塔克效应。通过采用倒置几何结构,观察到对吸附偶极的强金属样屏蔽,DFT确定这种效应源于局限于石墨烯靠近两性离子偶极一侧的电荷强烈不对称重新分布。输运测量证实为n型掺杂,且对载流子迁移率无显著影响,从而证明了一种在将石墨烯与光刻图案化聚合物相结合的器件中实现理想电子特性的途径。