Parkhomenko Roman G, De Luca Oreste, Kołodziejczyk Łukasz, Modin Evgeny, Rudolf Petra, Martínez Martínez Diego, Cunha Luis, Knez Mato
CIC NanoGUNE, Tolosa Hiribidea 76, E-20018 San Sebastian, Spain.
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
Dalton Trans. 2021 Nov 2;50(42):15062-15070. doi: 10.1039/d1dt02529e.
The great interest in aluminium nitride thin films has been attributed to their excellent dielectric, thermal and mechanical properties. Here we present the results of amorphous AlN films obtained by atomic layer deposition. We used trimethylaluminum and monomethylhydrazine as the precursors at a deposition temperature of 375-475 °C. The structural and mechanical properties and chemical composition of the synthesized films were investigated in detail by X-ray diffraction, X-ray photoelectron spectroscopy, electron and probe microscopy and nanoindentation. The obtained films were compact and continuous, exhibiting amorphous nature with homogeneous in-depth composition, at an oxygen content of as low as 4 at%. The mechanical properties were comparable to those of AlN films produced by other techniques.
氮化铝薄膜之所以备受关注，是因为其具有优异的介电、热学和力学性能。在此，我们展示了通过原子层沉积法获得的非晶态AlN薄膜的研究结果。我们使用三甲基铝和一甲基肼作为前驱体，沉积温度为375 - 475°C。通过X射线衍射、X射线光电子能谱、电子和探针显微镜以及纳米压痕技术，对合成薄膜的结构、力学性能和化学成分进行了详细研究。所获得的薄膜致密且连续，呈现非晶态性质，深度成分均匀，氧含量低至4原子%。其力学性能与其他技术制备的AlN薄膜相当。
