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聚多巴胺壳层作为镓储库用于引发共晶镓铟纳米合金中的镓铟相分离。

Polydopamine Shell as a Ga Reservoir for Triggering Gallium-Indium Phase Separation in Eutectic Gallium-Indium Nanoalloys.

作者信息

Xie Wanjie, Allioux Francois-Marie, Namivandi-Zangeneh Rashin, Ghasemian Mohammad B, Han Jialuo, Rahim Md Arifur, Tang Jianbo, Yang Jiong, Mousavi Maedehsadat, Mayyas Mohannad, Cao Zhenbang, Centurion Franco, Christoe Michael J, Zhang Chengchen, Wang Yifang, Merhebi Salma, Baharfar Mahroo, Ng Gervase, Esrafilzadeh Dorna, Boyer Cyrille, Kalantar-Zadeh Kourosh

机构信息

School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia.

Graduate School of Biomedical Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia.

出版信息

ACS Nano. 2021 Oct 26;15(10):16839-16850. doi: 10.1021/acsnano.1c07278. Epub 2021 Oct 6.

Abstract

Low melting point eutectic systems, such as the eutectic gallium-indium (EGaIn) alloy, offer great potential in the domain of nanometallurgy; however, many of their interfacial behaviors remain to be explored. Here, a compositional change of EGaIn nanoalloys triggered by polydopamine (PDA) coating is demonstrated. Incorporating PDA on the surface of EGaIn nanoalloys renders core-shell nanostructures that accompany Ga-In phase separation within the nanoalloys. The PDA shell keeps depleting the Ga from the EGaIn nanoalloys when the synthesis proceeds, leading to a Ga-coordinated PDA coating and a smaller nanoalloy. During this process, the eutectic nanoalloys turn into non-eutectic systems that ultimately result in the solidification of In when Ga is fully depleted. The reaction of Ga-coordinated PDA-coated nanoalloys with nitrogen dioxide gas is presented as an example for demonstrating the functionality of such hybrid composites. The concept of phase-separating systems, with polymeric reservoirs, may lead to tailored materials and can be explored on a variety of post-transition metals.

摘要

低熔点共晶体系,如共晶镓铟(EGaIn)合金,在纳米冶金领域具有巨大潜力;然而,它们的许多界面行为仍有待探索。在此,展示了由聚多巴胺(PDA)涂层引发的EGaIn纳米合金的成分变化。在EGaIn纳米合金表面引入PDA会形成核壳纳米结构,伴随纳米合金内部的Ga-In相分离。当合成过程进行时,PDA壳层持续从EGaIn纳米合金中消耗Ga,导致形成Ga配位的PDA涂层和更小的纳米合金。在此过程中,共晶纳米合金转变为非共晶体系,最终在Ga完全耗尽时导致In凝固。以Ga配位的PDA包覆纳米合金与二氧化氮气体的反应为例,展示了此类杂化复合材料的功能。具有聚合物储库的相分离体系概念可能会带来定制材料,并且可以在多种后过渡金属上进行探索。

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