Lee Hsin-Ying, Liu Day-Shan, Chyi Jen-Inn, Chang Edward Yi, Lee Ching-Ting
Department of Photonics, National Cheng Kung University, Tainan 70101, Taiwan.
Institute of Electro-Optical and Material Science, National Formosa University, Yunlin 63201, Taiwan.
Materials (Basel). 2021 Sep 22;14(19):5474. doi: 10.3390/ma14195474.
Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (GaO) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel AlInN/GaN/AlGaN/GaN heterostructured-metal-oxide-semiconductors (MOSHEMTs). The double-channel was constructed by the polarized AlGaN/GaN channel 1 and band discontinued lattice-matched AlInN/GaN channel 2. Because of the superior gate control capability, the generally induced double-hump transconductance characteristics of double-channel MOSHEMTs were not obtained in the devices. The superior gate control capability was contributed by the side-wall electrical field modulation in the fin-channel. Owing to the high-insulating GaO gate oxide layer and the high-quality interface between the GaO and GaN layers, low noise power density of 8.7 × 10 Hz and low Hooge's coefficient of 6.25 × 10 of flicker noise were obtained. Furthermore, the devices had a unit gain cutoff frequency of 6.5 GHz and a maximal oscillation frequency of 12.6 GHz.
通过激光干涉光刻系统制备的多台面鳍式沟道阵列以及通过气相冷却冷凝系统沉积的氧化镓（GaO）栅氧化层被应用于双通道AlInN/GaN/AlGaN/GaN异质结构金属氧化物半导体（MOSHEMT）中。双通道由极化的AlGaN/GaN沟道1和带隙中断的晶格匹配AlInN/GaN沟道2构成。由于具有卓越的栅极控制能力，该器件并未呈现出双通道MOSHEMT通常会出现的双峰跨导特性。这种卓越的栅极控制能力得益于鳍式沟道中的侧壁电场调制。由于高绝缘的GaO栅氧化层以及GaO与GaN层之间的高质量界面，获得了8.7×10 Hz的低噪声功率密度以及6.25×10的低Hooge闪烁噪声系数。此外，这些器件的单位增益截止频率为6.5 GHz，最大振荡频率为12.6 GHz。
