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掺杂半导体纳米晶二聚体中的成像红外等离子体杂化。

Imaging Infrared Plasmon Hybridization in Doped Semiconductor Nanocrystal Dimers.

机构信息

Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556, United States.

Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States.

出版信息

J Phys Chem Lett. 2021 Oct 28;12(42):10270-10276. doi: 10.1021/acs.jpclett.1c02741. Epub 2021 Oct 15.

Abstract

Carrier-doped semiconductor nanocrystals (NCs) offer strong plasmonic responses at frequencies beyond those accessible by conventional plasmonic nanoparticles. Like their noble metal analogues, these emerging materials can harness free space radiation and confine it to the nanoscale but at resonance frequencies that are natively infrared and spectrally tunable by carrier concentration. In this work we combine monochromated STEM-EELS and theoretical modeling to investigate the capability of colloidal indium tin oxide (ITO) NC pairs to form hybridized plasmon modes, providing an additional route to influence the IR plasmon spectrum. These results demonstrate that ITO NCs may have greater coupling strength than expected, emphasizing their potential for near-field enhancement and resonant energy transfer in the IR region.

摘要

载流子掺杂半导体纳米晶体(NCs)在频率上提供了强的等离子体响应,超出了传统等离子体纳米粒子的可及范围。与它们的贵金属类似物一样,这些新兴材料可以利用自由空间辐射并将其限制在纳米尺度内,但在共振频率下,它们是固有红外的,并且可以通过载流子浓度进行光谱可调谐。在这项工作中,我们结合单色化 STEM-EELS 和理论模型来研究胶体铟锡氧化物(ITO)NC 对形成杂化等离子体模式的能力,为影响 IR 等离子体光谱提供了另一种途径。这些结果表明,ITO NCs 的耦合强度可能比预期的更大,强调了它们在近场增强和 IR 区域共振能量转移方面的潜力。

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