Peng Mingfa, Liu Yang, Li Fei, Hong Xuekun, Liu Yushen, Wen Zhen, Liu Zeke, Ma Wanli, Sun Xuhui
School of Electronic and Information Engineering, Jiangsu Province Key Laboratory of Advanced Functional Materials, Changshu Institute of Technology, Changshu, Jiangsu 215500, P. R. China.
Institute of Functional Nano & Soft Materials (FUNSOM), and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.
ACS Appl Mater Interfaces. 2021 Nov 3;13(43):51198-51204. doi: 10.1021/acsami.1c13723. Epub 2021 Oct 21.
A PbSe colloidal quantum dot (QD) is typically a solution-processed semiconductor for near-infrared (NIR) optoelectronic applications. However, the wide application of PbSe QDs has been restricted due to their instability, which requires tedious synthesis and complicated treatments before being applied in devices. Here, we demonstrate efficient NIR photodetectors based on the room-temperature, direct synthesis of semiconducting PbSe QD inks. The in-situ passivation and the avoidance of ligand exchange endow PbSe QD photodetectors with high efficiency and low cost. By further constructing the PbSe QDs/ZnO heterostructure, the photodetectors exhibit the NIR responsivity up to 970 mA/W and a detectivity of 1.86 × 10 Jones at 808 nm. The obtained performance is comparable to that of the state-of-the-art PbSe QD photodetectors using a complex ligand exchange strategy. Our work may pave a new way for fabricating efficient and low-cost colloidal QD photodetectors.
硒化铅胶体量子点（QD）通常是一种通过溶液法制备的用于近红外（NIR）光电子应用的半导体。然而，由于其不稳定性，硒化铅量子点的广泛应用受到了限制，在将其应用于器件之前需要繁琐的合成和复杂的处理。在此，我们展示了基于室温下直接合成半导体硒化铅量子点墨水的高效近红外光电探测器。原位钝化和避免配体交换赋予了硒化铅量子点光电探测器高效率和低成本。通过进一步构建硒化铅量子点/氧化锌异质结构，该光电探测器在808纳米处表现出高达970毫安/瓦的近红外响应度和1.86×10琼斯的探测率。所获得的性能与使用复杂配体交换策略的最先进硒化铅量子点光电探测器相当。我们的工作可能为制造高效且低成本的胶体量子点光电探测器开辟一条新途径。
