Xie Liuping, Tang Wei, Liu Zhixin, Tang Wencheng, Yuan Zihao, Qin Yinbin, Yan Lei, Zhu Xunjin, Zhu Weiguo, Wang Xingzhu
School of Physics and Optoelectronics, College of Chemistry, Xiangtan University, Xiangtan 411105, China.
Department of Chemistry and Institute of Molecular Functional Materials, Hong Kong Baptist University, Waterloo Road, Kowloon Tong, Hong Kong, China.
Molecules. 2021 Oct 11;26(20):6134. doi: 10.3390/molecules26206134.
To explore the effect of the introduction of heteroatoms on the properties of porphyrin materials, a new porphyrin-based derivative small-molecule donor named as PorTT-T was designed and synthesized based on alkyl-thieno[3,2-]thiophene(TT)-substituted porphyrins. The linker bridge and end groups of PorTT-T were the same as those of XLP-II small-molecule donor materials, while the side-chain attached to the core of thieno[3,2-]thiophene(TT)-substituted porphyrin was different. Measurements of intrinsic properties showed that PorTT-T has wide absorption and appropriate energy levels in the UV-visible range. A comparison of the morphologies of the two materials using atomic force microscopy showed that PorTT-T has a better surface morphology with a smaller root-mean-square roughness, and can present closer intermolecular stacking as compared to XLP-II. The device characterization results showed that PorTT-T with the introduced S atom has a higher open circuit voltage of 0.886 eV, a higher short circuit current of 12.03 mAcm, a fill factor of 0.499, a high photovoltaic conversion efficiency of 5.32%, better external quantum efficiency in the UV-visible range, and higher hole mobility.
为了探究引入杂原子对卟啉材料性能的影响,基于烷基噻吩并[3,2 -]噻吩(TT)取代的卟啉,设计并合成了一种名为PorTT - T的新型卟啉基衍生物小分子给体。PorTT - T的连接桥和端基与XLP - II小分子给体材料相同,而连接在噻吩并[3,2 -]噻吩(TT)取代卟啉核心上的侧链不同。本征性质测量表明,PorTT - T在紫外 - 可见范围内具有宽吸收和合适的能级。使用原子力显微镜对两种材料的形貌进行比较表明,PorTT - T具有更好的表面形貌,均方根粗糙度更小,与XLP - II相比,分子间堆积更紧密。器件表征结果表明,引入S原子的PorTT - T具有0.886 eV的更高开路电压、12.03 mAcm的更高短路电流、0.499的填充因子、5.32%的高光电转换效率、在紫外 - 可见范围内更好的外量子效率以及更高的空穴迁移率。