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用于硅光子学的基于倾斜纳米光栅的超紧凑型宽带偏振分束器

Tilted Nano-Grating Based Ultra-Compact Broadband Polarizing Beam Splitter for Silicon Photonics.

作者信息

Liu Haipeng, Feng Jijun, Ge Jinman, Zhuang Shanqing, Yuan Shuo, Chen Yishu, Li Xiaojun, Tan Qinggui, Yu Qinghua, Zeng Heping

机构信息

Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System, Ministry of Education, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China.

National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology, Xi'an 710100, China.

出版信息

Nanomaterials (Basel). 2021 Oct 8;11(10):2645. doi: 10.3390/nano11102645.

Abstract

An ultra-compact broadband silicon polarizing beam splitter is proposed based on a tilted nano-grating structure. A light cross coupling can be realized for transverse-magnetic mode, while the transverse-electric light can almost completely output from the through port. The length of the coupling region is only 6.8 μm, while an extinction ratio of 23.76 dB can be realized at a wavelength of 1550 nm. As a proof of concept, the device was fabricated by a commercial silicon photonic foundry. It can realize a 19.84 dB extinction ratio and an 80 nm working bandwidth with an extinction ratio of larger than 10 dB. The presented device also shows a good fabrication tolerance to the structure deviations, which is favorable for its practical applications in silicon photonics.

摘要

基于倾斜纳米光栅结构提出了一种超紧凑宽带硅偏振分束器。对于横磁模式可实现光交叉耦合,而横电光几乎可完全从直通端口输出。耦合区域长度仅为6.8μm,在1550nm波长处可实现23.76dB的消光比。作为概念验证,该器件由商业硅光子代工厂制造。它可实现19.84dB的消光比和80nm的工作带宽,且消光比大于10dB。所展示的器件对结构偏差也具有良好的制造容差,这有利于其在硅光子学中的实际应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db35/8537285/69ec2d6d211b/nanomaterials-11-02645-g001.jpg

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