Chen Yang, Shen Pingchuan, Cao Tongxiang, Chen Hao, Zhao Zujin, Zhu Shifa
Key Laboratory of Functional Molecular Engineering of Guangdong Province, School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou, 510640, China.
State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, 510640, China.
Nat Commun. 2021 Oct 25;12(1):6165. doi: 10.1038/s41467-021-26387-5.
Oligofurans have attracted great attention in the field of materials over the last decades because of their several advantages, such as strong fluorescence, charge delocalization, and increased solubility. Although unsubstituted or alkyl-substituted oligofurans have been well-established, there is an increasing demand for the development of the aryl decorated oligofuran with structural diversity and unrevealed properties. Here, we report the bottom-up modular construction of chemically and structurally well-defined oligo(arylfuran)s by de novo synthesis of α,β'-bifuran monomers and late-stage bromination, stannylation and subsequent coupling reaction. The preliminary study of the photophysical properties demonstrated that the polarity-sensitive fluorescence emission and high quantum yields in THF solution could be achieved by modulating the aryl groups on the oligo(arylfuran)s. These twisted molecules constitute a new class of oligofuran backbone useful for structure-activities relationship studies. Meanwhile, the experimental studies and calculations showed that tetrafurans have appropriate HOMO energy levels, and could therefore potentially be high-performance p-type semiconductors.
在过去几十年中,低聚呋喃因其具有强荧光、电荷离域和溶解性增强等多种优势,在材料领域引起了极大关注。尽管未取代或烷基取代的低聚呋喃已得到充分研究,但对具有结构多样性和未揭示性质的芳基修饰低聚呋喃的开发需求日益增加。在此,我们报告了通过从头合成α,β'-双呋喃单体以及后期溴化、锡化和随后的偶联反应,对化学和结构明确的低聚(芳基呋喃)进行自下而上的模块化构建。光物理性质的初步研究表明,通过调节低聚(芳基呋喃)上的芳基,可以实现四氢呋喃在THF溶液中的极性敏感荧光发射和高量子产率。这些扭曲分子构成了一类新型的低聚呋喃主链,可用于结构-活性关系研究。同时,实验研究和计算表明,四氢呋喃具有合适的最高占据分子轨道(HOMO)能级,因此有可能成为高性能p型半导体。