One-dimensional van der Waals stacked p-type crystal TaPtSe for nanoscale electronics.

Recently, ternary transition metal chalcogenides TaXSe (X = Pd or Pt) have attracted great interest as a class of emerging one-dimensional (1D) van der Waals (vdW) materials. In particular, TaPdSe has been actively studied owing to its excellent charge transport properties as an n-type semiconductor and ultralong ballistic phonon transport properties. Compared to subsequent studies on the Pd-containing material, TaPtSe, another member of this class of materials has been considerably less explored despite its promising electrical properties as a p-type semiconductor. Herein, we demonstrate the electrical properties of TaPtSe as a promising channel material for nanoelectronic applications. High-quality bulk TaPtSe single crystals were successfully synthesized by a one-step vapor transport reaction. Scanning Kelvin probe microscopy measurements were used to investigate the surface potential difference and work function of the TaPtSe nanoribbons of various thicknesses. Field-effect transistors fabricated on exfoliated TaPtSe nanoribbons exhibited moderate p-type transport properties with a maximum hole mobility of 5 cm V s and an / ratio of >10. Furthermore, the charge transport mechanism of TaPtSe was analyzed by temperature-dependent transport measurements in the temperature range from 90 to 320 K. To include TaPtSe in a building block for modern 1D electronics, we demonstrate p-n junction characteristics using the electron beam doping method.