Jin Kyung-Hwan, Oh Eunseok, Stania Roland, Liu Feng, Yeom Han Woong
Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea.
Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
Nano Lett. 2021 Nov 24;21(22):9468-9475. doi: 10.1021/acs.nanolett.1c02811. Epub 2021 Nov 8.
Nonvanishing Berry curvature dipole (BCD) and persistent spin texture (PST) are intriguing physical manifestations of electronic states in noncentrosymmetric 2D materials. The former induces a nonlinear Hall conductivity while the latter offers a coherent spin current. Based on density-functional-theory (DFT) calculations, we demonstrate the coexistence of both phenomena in a Bi(110) monolayer with a distorted phosphorene structure. Both effects are concurrently enhanced due to the strong spin-orbit coupling of Bi while the structural distortion creates internal in-plane ferroelectricity with inversion asymmetry. We further succeed in fabricating a Bi(110) monolayer in the desired phosphorene structure on the NbSe substrate. Detailed atomic and electronic structures of the Bi(110)/NbSe heterostructure are characterized by scanning tunneling microscopy/spectroscopy and angle-resolved-photoemission spectroscopy. These results are consistent with DFT calculations which indicate the large BCD and PST are retained. Our results suggest the Bi(110)/NbSe heterostructure as a promising platform to exploit nonlinear Hall and coherent spin transport properties together.
非零贝里曲率偶极子(BCD)和持续自旋纹理(PST)是二维非中心对称材料中电子态有趣的物理表现。前者诱导出非线性霍尔电导率,而后者提供相干自旋电流。基于密度泛函理论(DFT)计算,我们证明了在具有扭曲磷烯结构的Bi(110)单层中这两种现象共存。由于Bi的强自旋轨道耦合,这两种效应同时增强,而结构畸变产生了具有反演不对称性的面内铁电性。我们进一步成功地在NbSe衬底上制备出具有所需磷烯结构的Bi(110)单层。通过扫描隧道显微镜/光谱和角分辨光电子能谱对Bi(110)/NbSe异质结构的详细原子和电子结构进行了表征。这些结果与DFT计算一致,DFT计算表明大的BCD和PST得以保留。我们的结果表明Bi(110)/NbSe异质结构是一个有前景的平台,可同时利用非线性霍尔和相干自旋输运特性。