Qi Xingnan, Wang Jiantao, Tan Furui, Dong Chen, Liu Kong, Li Xiaobao, Zhang Lisheng, Wu Hongkai, Wang Hsing-Lin, Qu Shengchun, Wang Zhanguo, Wang Zhijie
Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, Henan 475004, P. R. China.
The Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Department of Physics, Capital Normal University, Beijing 100048, P. R. China.
ACS Appl Mater Interfaces. 2021 Nov 24;13(46):55349-55357. doi: 10.1021/acsami.1c16290. Epub 2021 Nov 11.
CsPbIxBry-based all-inorganic perovskite materials are a potential candidate for stable semitransparent and tandem structured photovoltaic devices. However, poor film (morphological and crystalline) quality and interfacial recombination lead consequently to a decline in the photoelectric conversion performance of the applied solar cells. In this work, we incorporated PbS quantum dots (QDs) at the interface of electron transporting layer (ETL) SnO and perovskite to modulate the crystallization of CsPbIBr and the interfacial charge dynamics in carbon-based solar cells. The as-casted PbS QDs behave as seeds for lattice-matching the epitaxial growth of pinhole-free CsPbIBr films. The modified films with reduced defect density exhibit facilitated carrier transfer and suppressed charge recombination at the ETL/perovskite interface, contributing to an enhanced device efficiency from 7.00 to 9.09% and increased reproducibility and ambient stability. This strategic method of QD-assisted lattice-matched epitaxial growth is promising to prepare high-quality perovskite films for efficient perovskite solar cells.
基于CsPbIxBry的全无机钙钛矿材料是稳定的半透明和串联结构光伏器件的潜在候选材料。然而，较差的薄膜（形态和晶体）质量以及界面复合导致所应用太阳能电池的光电转换性能下降。在这项工作中，我们在电子传输层（ETL）SnO和钙钛矿的界面处引入了PbS量子点（QDs），以调节CsPbIBr的结晶以及碳基太阳能电池中的界面电荷动力学。铸态的PbS量子点充当种子，用于与无针孔的CsPbIBr薄膜的外延生长进行晶格匹配。缺陷密度降低的改性薄膜在ETL/钙钛矿界面处表现出促进的载流子转移和抑制的电荷复合，使器件效率从7.00%提高到9.09%，并提高了重现性和环境稳定性。这种量子点辅助晶格匹配外延生长的策略性方法有望制备用于高效钙钛矿太阳能电池的高质量钙钛矿薄膜。
