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基于铟的微凸点阵列制造技术,附加预回流湿法蚀刻和退火

Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing.

作者信息

Kozłowski Paweł, Czuba Krzysztof, Chmielewski Krzysztof, Ratajczak Jacek, Branas Joanna, Korczyc Adam, Regiński Kazimierz, Jasik Agata

机构信息

Łukasiewicz Research Network-Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, Poland.

出版信息

Materials (Basel). 2021 Oct 21;14(21):6269. doi: 10.3390/ma14216269.

Abstract

Indium-based micro-bump arrays, among other things, are used for the bonding of infrared photodetectors and focal plane arrays. In this paper, several aspects of the fabrication technology of micrometer-sized indium bumps with a smooth surface morphology were investigated. The thermal evaporation of indium has been optimized to achieve ~8 μm-thick layers with a small surface roughness of R = 11 nm, indicating a high packing density of atoms. This ensures bump uniformity across the sample, as well as prevents oxidation inside the In columns prior to the reflow. A series of experiments to optimize indium bump fabrication technology, including a shear test of single columns, is described. A reliable, repeatable, simple, and quick approach was developed with the pre-etching of indium columns in a 10% HCl solution preceded by annealing at 120 °C in N.

摘要

铟基微凸点阵列等可用于红外光电探测器与焦平面阵列的键合。本文研究了具有光滑表面形貌的微米级铟凸点制造技术的几个方面。铟的热蒸发已得到优化,以获得厚度约为8μm、表面粗糙度R = 11nm较小的层,这表明原子具有较高的堆积密度。这确保了样品上凸点的均匀性,并防止回流前铟柱内部发生氧化。描述了一系列优化铟凸点制造技术的实验,包括单柱剪切试验。开发了一种可靠、可重复、简单且快速的方法,即在10%盐酸溶液中对铟柱进行预蚀刻,然后在氮气中于120°C退火。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a846/8584861/95320afd57d3/materials-14-06269-g001.jpg

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