Jang Junho, Geum Dae-Myeong, Kim SangHyeon
Opt Express. 2021 Nov 8;29(23):38894-38903. doi: 10.1364/OE.443094.
A broadband photodetector is becoming increasingly important as a key element for multicolor imaging. We proposed an Au/n-GaSb Schottky photodetector (PD) array with a wide spectral range from ultraviolet (UV) to short-wavelength infrared (SWIR). The PD was formed by deposition of a 5 nm-thick Au layer on the n-type GaSb substrate and subsequent mesa array formation. The fabricated PD array has shown uniform electrical characteristics and good rectifying behaviors. From the photoresponse measurement, the PD has shown uniformly high external quantum efficiency (EQE) over a spectral range of 300 nm to 1700nm. The value of EQE was 35% at 300 nm and exceeded 50% in the IR region. Furthermore, the PD has shown a rapid rise time of 1.44 µs from the transient photoresponse measurement.
宽带光电探测器作为多色成像的关键元件正变得越来越重要。我们提出了一种具有从紫外（UV）到短波红外（SWIR）宽光谱范围的Au/n-GaSb肖特基光电探测器（PD）阵列。该光电探测器是通过在n型GaSb衬底上沉积一层5 nm厚的Au层并随后形成台面阵列而制成的。所制备的PD阵列表现出均匀的电学特性和良好的整流行为。从光响应测量结果来看，该光电探测器在300 nm至1700nm的光谱范围内表现出均匀的高外部量子效率（EQE）。在300 nm处EQE值为35%，在红外区域超过50%。此外，从瞬态光响应测量结果来看，该光电探测器的上升时间为1.44 µs，上升速度很快。
