Zu Fengshuo, Shin Dongguen, Koch Norbert
Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany.
Mater Horiz. 2022 Jan 4;9(1):17-24. doi: 10.1039/d1mh01106e.
We have witnessed tremendous progress of metal halide perovskite (MHP)-based optoelectronic devices, especially in the field of photovoltaics. Despite intensive research in the past few years, questions still remain regarding their fundamental optoelectronic properties, among which the electronic properties exhibit an interplay of numerous phenomena that deserve serious scrutiny. In this Focus article, we aim to provide a contemporary understanding of the unique electronic properties that has been resolved by the community. First introducing some of the basic concepts established in semiconductor physics, the intrinsic and extrinsic electronic properties of the MHPs are disentangled and explained. With this, the complex interplay of interface-, dopant-, and surface state-induced electronic states in determining the electrostatic landscape in the material can be comprehended, and the energy level alignment in device architectures more reliably assessed.
我们见证了基于金属卤化物钙钛矿(MHP)的光电器件取得的巨大进展,尤其是在光伏领域。尽管在过去几年中进行了深入研究,但关于其基本光电特性仍存在问题,其中电子特性表现出众多值得认真审视的现象之间的相互作用。在这篇聚焦文章中,我们旨在对该领域已解决的独特电子特性提供当代的理解。首先介绍半导体物理学中确立的一些基本概念,然后对MHP的本征和非本征电子特性进行梳理和解释。借此,可以理解界面、掺杂剂和表面态诱导的电子态在确定材料静电态势中的复杂相互作用,并且能更可靠地评估器件结构中的能级对准情况。